V4PAL45HM3_A/I Allicdata Electronics

V4PAL45HM3_A/I Discrete Semiconductor Products

Allicdata Part #:

V4PAL45HM3_A/IGITR-ND

Manufacturer Part#:

V4PAL45HM3_A/I

Price: $ 0.13
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE SCHOTTKY 45V 3A DO221BC
More Detail: Diode Schottky 45V 3A Surface Mount DO-221BC (SMPA...
DataSheet: V4PAL45HM3_A/I datasheetV4PAL45HM3_A/I Datasheet/PDF
Quantity: 1000
14000 +: $ 0.11940
Stock 1000Can Ship Immediately
$ 0.13
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 430mV @ 2A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 450µA @ 45V
Capacitance @ Vr, F: 450pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 150°C
Description

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The V4PAL45HM3_A/I is a shottky barrier rectifier diode that is made using the advanced planar technology which helps the device to provide high current capability while still having low forward voltage drop. This diode is used in power supplies, high-frequency circuits, rectification, and other electronic applications.

Shottky barrier rectifier diodes are made of two P-type and N-type semiconductor materials that are joined at a junction. The diode is created by placing a metal layer in between the two layers of semiconductor material. The predominant electrical characteristic of the schottky diode is its fast reverse recovery time, low power losses, no reverse recovery current, and low forward voltage drop.

The V4PAL45HM3_A/I is designed for high-speed switching, high frequency rectification, and voltage-changing applications. It is designed to handle high surge current applications, providing high load density with its low profile, and also requires a low amount of gate current. With its wide range of switching frequencies, it is suitable for a variety of rectification and voltage-changing configurations.

A key factor in the device’s performance is its schottky barrier design. This makes the device unique in its ability to provide near zero leakage current and low forward voltage drop. These features allow the device to provide low power losses, high frequency switching without significant losses, and a low amount of power dissipated even at high load currents. Additionally, the device is made of gold p-type and n-type semiconductor materials that are joined at a junction, providing close junction temperature and a low amount of electric noise.

The V4PAL45HM3_A/I\'s working principle is straightforward and simple. When a positive voltage is applied to the anode and a negative voltage to the cathode, it forms a selective barrier between the two points, allowing current to flow from the anode to the cathode. When no voltage is applied to the diode, it blocks current from flowing.

The V4PAL45HM3_A/I is a single diode rectifier and is ideal for a wide range of applications including high power supplies, high frequency or low frequency rectification, voltage conversion, and switch-mode power supplies. It is easy to use and provides excellent performance with a wide range of switching frequencies. With its low profile, fast recovery time, and low forward voltage drop, the V4PAL45HM3_A/I is an ideal choice for power supplies and other electronic applications.

The specific data is subject to PDF, and the above content is for reference

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