V4PAN50-M3/I Discrete Semiconductor Products |
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Allicdata Part #: | V4PAN50-M3/ITR-ND |
Manufacturer Part#: |
V4PAN50-M3/I |
Price: | $ 0.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE SCHOTTKY 50V 3A DO221BC |
More Detail: | Diode Schottky 50V 3A Surface Mount DO-221BC (SMPA... |
DataSheet: | V4PAN50-M3/I Datasheet/PDF |
Quantity: | 1000 |
14000 +: | $ 0.11217 |
28000 +: | $ 0.11078 |
Series: | TMBS® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 430mV @ 2A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 600µA @ 50V |
Capacitance @ Vr, F: | 480pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-221BC, SMA Flat Leads Exposed Pad |
Supplier Device Package: | DO-221BC (SMPA) |
Operating Temperature - Junction: | -40°C ~ 150°C |
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Diodes are the most common type of semiconductor. They are used to both choose the direction of current flow and regulate the voltage level in applications. The single diode is the fundamental component of rectifier circuits, drawing current from one side of a conductor and forcing it onto the other. The V4PAN50-M3/I is a single power diode that is often used in power conversion and control circuits.
This particular diode has a reverse operating voltage range of 600V, with a current rating of 50A and a surge capacity of 375A. It is also capable of withstanding high temperatures, with a peak thermal rating of 175°C and a steady state operating temperature range of up to 150°C. Its ultra-thin packages also make it suitable for high density board layouts.
The V4PAN50-M3/I is most commonly used in bridge rectified circuits. This power diode is capable of carrying the entire load that lies across the conductor with a high level of efficiency. The V4PAN50-M3/I is also suitable for applications where rectification needs to be done in a very short time.
The working principle of the V4PAN50-M3/I is straightforward. Inside the diode, the semiconductor material is doped with impurities and forms an N-type and a P-type region. The material acts as a barrier and current can only flow in one direction. The diode is designed to allow current to flow when a minimum forward voltage is applied to it. When the voltage exceeds the cut-off value, the diode is reverse biased, and current flow is prevented.
In addition to bridge rectification, the V4PAN50-M3/I is also used in power regulation, protection circuits, and various switching applications. It is also suitable for controlling the flow of current in circuits where the voltage is changing rapidly. The thickness of the package and its high power dissipation enable it to be applied in miniature circuits.
The V4PAN50-M3/I single diode is a powerful component that incorporates the latest in diode technology. Its ability to withstand high currents and temperatures makes it suitable for a variety of applications. The diode\'s simple working principle makes it ideal for use in rectification and power control circuits.
The specific data is subject to PDF, and the above content is for reference
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