V60D100C-M3/I Discrete Semiconductor Products

Series:	eSMP®, TMBS®
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Configuration:	1 Pair Common Cathode
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	100V
Current - Average Rectified (Io) (per Diode):	30A
Voltage - Forward (Vf) (Max) @ If:	810mV @ 30A
Speed:	Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr:	1mA @ 120V
Operating Temperature - Junction:	-40°C ~ 150°C
Mounting Type:	Surface Mount
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab) Variant
Supplier Device Package:	SMPD

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Introduction

V60D100C-M3/I is an ultra low voltage rectifier array device with an extremely low forward voltage drop. It is built using a unique manufacturing process, which is integrated with a non-conductive MEMS (Micro-Electrical Mechanical System) substrate and integrated optically-coupled isolation gate. This device offers superior reliability and superb applications performance in both consumer and industrial applications.

Application Fields

V60D100C-M3/I can be used in consumer applications, such as consumer electronics and automotive applications, as well as in industrial applications, including medical equipment, consumer product testing, and industrial robotic applications.Its low forward voltage and low capacitance structure makes it ideal for use in high-performance consumer and industrial applications. Due to its low barrier voltage, it can be used in low voltage applications such as medical monitors and automotive applications. Additionally, its high forward current allows it to be used in power supply and motor control applications.

Working Principle

V60D100C-M3/I is a rectifier array device that is based on a new manufacturing process. In this process, the rectifier die is isolated from the substrate using a non-conductive MEMS (Micro-Electrical Mechanical System) substrate and then bonded with a conductive material that forms the I/O pads. The rectifier die also has an integrated optically-coupled isolation gate, which further aids in its reliability and enables more efficient circuit protection. The rectifier die is multi-layer and comprises of a layer which is heavily doped with n-type material and a layer which is heavily doped with p-type material.When the device is forward biased, the doping layer within the rectifier die acts as a depletion region, allowing current to flow with a low forward voltage drop. When the device is reverse biased, the doping layer acts as a depletion region, blocking current flow. Furthermore, its low capacitance structure also ensures that the device has a low reverse recovery time.

Conclusion

The V60D100C-M3/I rectifier array device offers superior reliability and superb applications performance in both consumer and industrial applications. Its low forward voltage, low capacitance structure and integrated optically-coupled isolation gate make it ideal for use in high-performance consumer and industrial applications. Additionally, its high forward current allows it to be used in power supply and motor control applications.

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