V60DM45C-M3/I Discrete Semiconductor Products

Diodes-Rectifiers-ArraysThe V60DM45C-M3/I is a 3.0 V to 45 V, ultra-low odic silicon Schottky barrier rectifier array. It is ideal for high frequency, low voltage applications such as those in laptops, tablets, and cellular phones. This device is built with N-Channel MOSFETs which have higher drain-to-source breakdown voltage (BVDSS) ratings than the conventional P-Channel MOSFETs used in Schottky diodes and rectifiers. The increased voltage rating allows the device to handle higher current levels. Additionally, its low on-state resistance (RDS(ON)) reduces conduction losses, thereby improving efficiency. Moreover, the device is built with an integrated voltage regulator which helps to maintain a constant VBUS voltage across the entire operating range. This helps to ensure proper operation even during extreme thermal conditions. The device also features a built-in thermal protection circuit which triggers a shutdown if the junction temperature exceeds the maximum safe value. In terms of its application field, the V60DM45C-M3/I is used for ultra-low voltage power supply applications such as protection circuits, switching regulators, and adapters. Additionally, it can be used in DC-to-DC converters, battery chargers, and other DC/DC power supply applications. Its wide input range and low loss characteristics make it an ideal solution for energy-efficient systems. In terms of its working principle, the V60DM45C-M3/I is designed to be an efficient, low-loss rectifier array. When a current flows through one of the MOSFETs, it creates a voltage drop which determines the output voltage of the device. The device also features an integrated protection circuit which guards against unexpected overcurrent and overvoltage conditions. This protection circuit is designed to quickly shut the device off when it detects dangerous conditions. In conclusion, the V60DM45C-M3/I is a versatile, highly efficient rectifier array which can be used for a wide range of applications. It is built with N-Channel MOSFETs which offer higher drain-to-source breakdown voltage ratings, reducing conduction losses and improving efficiency. Additionally, its integrated protection circuits guard against dangerous overcurrent and overvoltage conditions.