V8PAL45-M3/I

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	45V
Current - Average Rectified (Io):	4A (DC)
Voltage - Forward (Vf) (Max) @ If:	570mV @ 8A
Speed:	Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr:	1.85mA @ 45V
Capacitance @ Vr, F:	--
Mounting Type:	Surface Mount
Package / Case:	DO-221BC, SMA Flat Leads Exposed Pad
Supplier Device Package:	DO-221BC (SMPA)
Operating Temperature - Junction:	-40°C ~ 150°C

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Introduction

The V8PAL45-M3/I is a single rectifier diode designed for high frequency applications such as switched mode power supplies. It is a high voltage diodes with integrated Schottky barrier and low reverse leakage current. While most diodes can handle rectification of AC currents, the V8PAL45-M3/I has been designed specifically for AC/DC conversion, and its integrated Schottky Barrier allows it to reduce the reverse leakage current significantly.

Application Field

The V8PAL45-M3/I is primarily used in high voltage applications where a low reverse leakage current is essential. This device is suitable for a wide range of applications such as automotive, telecom and industrial equipment.The device is suitable for use in power supplies where high current rectification is required. It has an on-state voltage drop of 0.26V and a reverse voltage of 45V.The device has an extended range of frequency response, enabling it to be used for frequency switching applications. This means that it is also suitable for applications such as AC/DC converters, power factor correction, and motor drives.Finally, the V8PAL45-M3/I is suitable for use in temperatures from -55°C to 150°C.

Working Principle

The V8PAL45-M3/I is a high voltage rectifier diode with an integrated Schottky barrier. This device works by using an n-type layer within the diode to restrict current in one direction through the diode. The integrated Schottky Barrier helps to reduce reverse leakage current significantly.When current passes through the device, it creates an electric field which forces electrons from the n-layer to the P-layer. This displacement creates a potential barrier between the two layers, which prevents current from flowing in the opposite direction.In other words, the V8PAL45-M3/I works by creating an electric field that restricts current in one direction through the diode. This helps to reduce the reverse leakage current significantly, and makes the device suitable for high power applications.

Conclusion

The V8PAL45-M3/I is a single rectifier diode designed for a wide range of applications in the automotive, telecommunications and industrial sectors. It has a low reverse leakage current, high voltage capabilities, an extended frequency response and a wide temperature range. By using an integrated Schottky Barrier, the device is able to reduce reverse leakage current significantly, making it suitable for high power applications. The device works by using an n-type layer to create an electric field which prevents current from flowing in the opposite direction.

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