Allicdata Part #: | VB10150C-E3/8W-ND |
Manufacturer Part#: |
VB10150C-E3/8W |
Price: | $ 0.40 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ARRAY SCHOTTKY 150V TO263 |
More Detail: | Diode Array 1 Pair Common Cathode Schottky 150V 5A... |
DataSheet: | VB10150C-E3/8W Datasheet/PDF |
Quantity: | 1000 |
1600 +: | $ 0.35780 |
Series: | TMBS® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 150V |
Current - Average Rectified (Io) (per Diode): | 5A |
Voltage - Forward (Vf) (Max) @ If: | 1.41V @ 5A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 100µA @ 150V |
Operating Temperature - Junction: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AB |
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The VB10150C-E3/8W Rectifier Diode Array is mainly used in the smart power devices, such as in the switch mode power supplies, power factor correction, output rectification and inload circuits.
It is an efficient, cost effective and highly flexible rectifier array with an efficiency of up to 99%. This particular product features fast recovery and low forward voltage characteristics. It is also able to handle high voltage and current.
A rectifier diode array consists of diode and transistor elements to provide better performance and cost savings due to the ability to reduce the number of diodes needed. It is designed to protect the circuit from high voltage and current. In the case of the VB10150C-E3/8W, it is built with two high voltage Schottky diodes, two fast recovery Schottky diodes and two transistors.
The high voltage Schottky diodes are used to control the input ripple current. They are intended to control and reduce the voltage fluctuations, leading to improved voltage regulation. The fast recovery Schottky diodes are designed to reduce the potential for reverse EMFs in switching mode power supplies.
The two transistors are used in the VB10150C-E3/8W for protection of the circuit from surge currents. The transistors also help to reduce the thermal losses to a certain extent. The complete integration of components reduces the number of parts required in the assembly and leads to easier routing of the output ripple current.
The working principle of the VB10150C-E3/8W Rectifier Diode Array involves the semiconductor materials used. When current passes through the diode, it causes the electrons and the holes in the semiconductor material to move in an opposite direction. This causes an electrical field to be formed which causes a flow of electrons in a particular direction.
In the case of a PN junction, an electric field is formed between the P and the N-type semiconductor materials. When a voltage is applied across the PN junction, the electric field will move the electrons and the holes, allowing current to pass through the junction. This is known as the rectification process.
The VB10150C-E3/8W Rectifier Diode Array is generally used for the protection of the circuit from high voltage as well as current. The low forward voltage and fast recovery characteristics of the diode make it ideal for use in high performance applications such as in switch mode power supplies, power factor correction and load circuits.
The VB10150C-E3/8W Rectifier Diode Array is an efficient and cost-effective device which offers better performance compared to the conventional rectifiers. The integration of two high voltage Schottky diodes, two fast recovery Schottky diodes and two transistors make it suitable for a wide range of applications. It is easy to install and can handle high voltage and current.
The specific data is subject to PDF, and the above content is for reference
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