VB40150C-M3/4W Allicdata Electronics
Allicdata Part #:

VB40150C-M3/4W-ND

Manufacturer Part#:

VB40150C-M3/4W

Price: $ 0.67
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE SCHOTTKY 40A 150V TO-263AB
More Detail: Diode Array 1 Pair Common Cathode Schottky 150V 15...
DataSheet: VB40150C-M3/4W datasheetVB40150C-M3/4W Datasheet/PDF
Quantity: 1000
2000 +: $ 0.60458
Stock 1000Can Ship Immediately
$ 0.67
Specifications
Series: TMBS®
Packaging: Tube 
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io) (per Diode): 15A
Voltage - Forward (Vf) (Max) @ If: 1.36V @ 15A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 200µA @ 150V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Description

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VB40150C-M3/4W Application Field and Working Principle

VB40150C-M3/4W series are diodes rectifiers arrays developed by Veri-Boom Technology, with a wide application range.

The series contains three packages, VB40150C-M3/4W, VB40150C-M3A/4W and VB40150C-M3.4W. These packages offer excellent surge current capability and superior high temperature reverse leakage protection, making them ideal for use in high power applications. The VB40150C-M3/4W is especially suitable for automotive, telecommunications, and industrial applications.

The series features excellent thermal stability, low distortion, and short turn-on time.

Principle of Operation

The working principle of VB40150C-M3/4W series is based on the P-N junction theory. When a forward bias is applied to the P-N junction, holes and electrons combine, allowing current to flow. As the concentration of holes and electrons is much greater than the minority carriers in the P (positively charged) and N (negatively charged) regions of the junction, the current flow is greatly enhanced.

When a reverse bias is applied to the P-N junction, the holes in the P region and the electrons in the N region become unable to move freely, and the current decreases. The reverse breakdown voltage determines the maximum reverse bias that can be applied to the P-N junction.

Application Fields

VB40150C-M3/4W series can be used in a wide variety of applications, including automotive, telecommunications, and industrial. The series offers superior surge current handling capacity and superior reverse leakage protection at high temperatures rated at 300V, making it ideal for use in high power applications. The series can be used as rectifiers, high power switches, and converters.

Due to the excellent thermal stability and low distortion of the series, it can also be used as rectifiers for soft-start circuits, solar inverters, high-current DC-DC converters, defense and aerospace power systems, and medical instrumentation.

Advantages

The VB40150C-M3/4W series offers several advantages compared to other diodes rectifiers available on the market, including:

  • Excellent thermal stability
  • Low distortion
  • Superior surge current handling capacity
  • Superior high temperature reverse leakage protection
  • Short turn-on time

The VB40150C-M3/4W series provides a cost-effective solution for many high power applications, including automotive, telecommunications and industrial.

The specific data is subject to PDF, and the above content is for reference

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