| Allicdata Part #: | VBH40-05B-ND |
| Manufacturer Part#: |
VBH40-05B |
| Price: | $ 56.97 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET 4N-CH 500V 40A V2 |
| More Detail: | Mosfet Array 4 N-Channel (H-Bridge) 500V 40A Chas... |
| DataSheet: |  VBH40-05B Datasheet/PDF |
| Quantity: | 1000 |
| 6 +: | $ 51.78810 |
| Series: | HiPerFET™ |
| Packaging: | Bulk |
| Part Status: | Active |
| FET Type: | 4 N-Channel (H-Bridge) |
| FET Feature: | Standard |
| Drain to Source Voltage (Vdss): | 500V |
| Current - Continuous Drain (Id) @ 25°C: | 40A |
| Rds On (Max) @ Id, Vgs: | 116 mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 8mA |
| Gate Charge (Qg) (Max) @ Vgs: | 270nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | -- |
| Power - Max: | -- |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Chassis Mount |
| Package / Case: | V2-PAK |
| Supplier Device Package: | V2-PAK |
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VBH40-05B is a 40V N-Channel Enhancement-Mode MOSFET array. It has two MOSFETs in the package, each manufactured with a high-resistance silicon junction and optimized for both high-performance and low-power consumption. The MOSFET array is ideal for many consumer applications such as switching, lighting, and load driving.
Application Field
VBH40-05B can be used in a wide range of consumer applications including motor control, lighting, and AC/DC power conversion for loads such as digital TVs and TVs. The wide drain-source voltage range, combined with the low on-state resistance and high gate-source voltage, makes the device robust and efficient in operation. Moreover, the MOSFET array is especially suitable for applications where high power is required, such as servers, automotive and industrial motor control systems, and other motor drives.
Working Principle
The n-channel enhancement-mode MOSFET array consists of two n-channel MOSFETs that are paired together in the same package. Each MOSFET has a gate, a source, and a drain along with an MPF (MOSFET Protection FETS). The gate is used to control the current flow from the source to the drain. When the gate voltage is greater than the threshold voltage (VGS(th)), a small current (IDSS) flows from source to drain. This small current increases up to the specific drain current (ID). Thus, by controlling the gate voltage (VGS), the drain current (ID) can be adjusted.
In addition to controlling the current, it is also possible to supply power using the MOSFET array. The VBH40-05B is used to provide power in applications such as lighting, power conversion, and motor control systems. When the drain voltage (VD) is higher than the threshold voltage (VGS(th)), the device "pulls" the signal from the gate to the source. When the VGS is lower than the threshold voltage (VGS(th)), the device "pulls" the signal from the drain to the source.
Overall, the VBH40-05B is an ideal device for a wide range of consumer applications. Due to its low on-state resistance, high gate-source voltage and wide drain-source voltage range, it offers superior performance, stability, and high-reliability in operation.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| VBH40-05B | IXYS | 56.97 $ | 1000 | MOSFET 4N-CH 500V 40A V2M... |
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