VESD05A8C-HNH-GS08 Circuit Protection

Voltage - Clamping (Max) @ Ipp:	13V
Supplier Device Package:	LLP1713-9L
Package / Case:	8-UFDFN Exposed Pad
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 125°C (TJ)
Capacitance @ Frequency:	10pF @ 1MHz
Applications:	General Purpose
Power Line Protection:	No
Power - Peak Pulse:	33W
Current - Peak Pulse (10/1000µs):	2.5A (8/20µs)
Series:	--
Voltage - Breakdown (Min):	6V
Voltage - Reverse Standoff (Typ):	5V (Min)
Unidirectional Channels:	8
Type:	Zener
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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Introduction

The VESD05A8C-HNH-GS08 is a transient voltage suppressor diode(TVS), or TransZorb Diode, that belongs to a family of protective semiconductor devices used to protect sensitive electronic equipmentfrom transients generated from external sources or generated internally. The device is designed to provide bi-directional overvoltage protection from lightning and electrostatic discharge, and is available with either anode-cathode breakdown voltage ratings from 5.0 to 8.0 volts.

Application Field

TVS diodes, having the VESD05A8C-HNH-GS08 model as example, are mainly used to protect ports and circuits from electrostatic discharge, lightning, and other electrical surges. They are usually designed to protect telephone lines, USB ports, Ethernet ports, automobiles, and other systems with voltage and current requirements. TVS diodes such as the VESD05A8C-HNH-GS08 are also widely used in industrial applications. The diodes are used to provide robust protection for microcontrollers and other integrated circuits from damage caused by surge disturbances originating from external or internal sources, as well as overload currents.

Working Principle

The main working principle of the VESD05A8C-HNH-GS08 TVS diode is based on the avalanche breakdown mechanism. During a surging event or transient, the diode reacts quickly to the higher than normal voltage and current levels. The external voltage increases, which causes the p-n junction to avalanche and quickly snap to a reverse breakdown voltage. This creates a large current flow, which can then dissipate the energy into the ground path. In order to protect itself from damage, the diode incorporates a built-in resistor, which helps to limit the current flow that passes through the diode. This helps to provide a steady and regulated current flow to the circuit and prevents the diode from becoming damaged. The diode is also designed to withstand high power surges and is rated to absorb up to 600 watts of power.

Conclusion

The VESD05A8C-HNH-GS08 TVS diode is a protective semiconductor device designed to offer bi-directional overvoltage protection from external transients and surges. It is designed to provide robust protection for ports, circuits, integrated circuits, and other sensitive electronic equipment from damage caused by electrical disturbances. It has a voltage rating of 5-8V and can absorb up to 600 watts of power. The working principle of the diode is based on the avalanche breakdown mechanism, which helps to limit the current flow and protect the device from damage by dissipating the energy into the ground path.

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