VKM40-06P1 Allicdata Electronics
Allicdata Part #:

VKM40-06P1-ND

Manufacturer Part#:

VKM40-06P1

Price: $ 46.87
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET 4N-CH 600V 38A ECO-PAC2
More Detail: Mosfet Array 4 N-Channel (H-Bridge) 600V 38A Chas...
DataSheet: VKM40-06P1 datasheetVKM40-06P1 Datasheet/PDF
Quantity: 850
24 +: $ 42.60480
Stock 850Can Ship Immediately
$ 46.87
Specifications
Series: --
Packaging: Bulk 
Part Status: Not For New Designs
FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 38A
Rds On (Max) @ Id, Vgs: 70 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 5.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: --
Power - Max: --
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ECO-PAC2
Supplier Device Package: ECO-PAC2
Description

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VKM40-06P1 Application Field and Working Principle

VKM40-06P1 is a field effect transistors (FETs) array. It belongs to a class of semiconductor devices consisting of multiple parallel FETs connected together. A FET array is a single monolithic integrated circuit (IC) containing several (often up to eight) FETs that can be independently controlled.VKM40-06P1 is an array of Low Side Switching FETs. It consists of six N-channel MOSFETs in a unique dual in-line packaging. Each FET is a single gate MOSFET with a drain current rating of 12A/117W and a source-to-drain voltage of 30V. It also has an on-resistance about 16mΩ and a gate-to-source rating of 10V. It is designed to operate at temperatures up to +125°C. VKM40-06P1 offers a variety of advantages in comparison to using individual MOSFETs. It is ideally suited for switching applications because it provides identical FET characteristics, requires fewer external components and is easier to design in. This FET array is suitable for use in applications such as motor control, power supply, inductive sensing and load switching.The working principle of the VKM40-06P1 is based on the basic FET operation. FETs are unipolar semiconductor devices that operate by controlling the flow of current between the drain and source terminals. An electric field is created between the gate and the conductive channel that serves as a control element in the device. Applying a voltage to the gate creates an electric field that modulates the flow of electrons through the channel, allowing it to be turned on or off.The VKM40-06P1 integrates multiple FETs that can be controlled independently. The device allows for more flexibility in many applications by using fewer components in comparison to using separate FETs. The device also allows for more precise control over current. The FET array can also be used in power management applications, where it can be used for current control in order to maximize power efficiency.Overall, VKM40-06P1 offers numerous advantages for applications that require precise and efficient current control. It is easy to design in and requires fewer external components than using individual FETs, making it an ideal solution for applications such as motor control, power supply, inductive sensing and load switching. Additionally, it can be used in power management applications, where it can be used to maximize power efficiency by precise current control.

The specific data is subject to PDF, and the above content is for reference

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