Allicdata Part #: | VKM60-01P1-ND |
Manufacturer Part#: |
VKM60-01P1 |
Price: | $ 51.46 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET 4N-CH 100V 75A ECO-PAC2 |
More Detail: | Mosfet Array 4 N-Channel (H-Bridge) 100V 75A 300W ... |
DataSheet: | VKM60-01P1 Datasheet/PDF |
Quantity: | 1000 |
25 +: | $ 46.78280 |
Series: | HiPerFET™ |
Packaging: | Bulk |
Part Status: | Not For New Designs |
FET Type: | 4 N-Channel (H-Bridge) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 75A |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id: | 4V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: | 260nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 4500pF @ 25V |
Power - Max: | 300W |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | ECO-PAC2 |
Supplier Device Package: | ECO-PAC2 |
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The VKM60-01P1 is a dual N-channel MOSFET array designed for low voltage applications such as hot-swap and load-switch programs. It\'s a compact, cost effective solution for hot-swap applications. This device features small gate charge, low RDS(ON), and low gate-source resistance. In addition, it offers fast switching speeds and a low on-state resistance.
A MOSFET is a metal oxide semiconductor field-effect transistor, and it\'s an electronic device that\'s used to amplify or switch electronic signals. MOSFETs are commonly used as switching elements in power electronics. The VKM60-01P1 dual N-channel MOSFET array is an integrated circuit (IC) that consists of two (2) P-channel MOSFETs, each with its own gate, source, and drain connection. It is designed to provide a cost-effective solution for a wide range of applications.
Applications
The VKM60-01P1 can be used for a variety of applications, such as hot-swap and load-switching programs. In these programs, it is used to quickly and safely switch high currents in and out of a circuit. The device can also be used for load current management, circuit protection and voltage regulation. Additionally, it has been designed for low voltage and high frequency applications.
Working principal
The VKM60-01P1 works by using the principle of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) technology. When a voltage is applied to the gate of the MOSFET, it causes electrons to flow from the source to the drain. This creates an electric field between the source and the drain, allowing current to flow through the device. The amount of current that flows is dependent on the applied voltage. As the voltage increases, the current will increase proportionally.
The VKM60-01P1 uses two MOSFETs with different threshold voltages. One MOSFET acts as a high side switch, while the other acts as a low side switch. This allows the current to be controlled over a wide range of voltages. The device also features a low on-state resistance, fast switching speeds, and low gate charge.
In summary, the VKM60-01P1 is a dual N-channel MOSFET array designed for low voltage, high frequency applications such as hot-swap and load-switching programs. It is an integrated circuit device that features low gate charge, low RDS(ON), and low gate-source resistance, as well as fast switching speeds and a low on-state resistance. The device is compact, cost effective, and provides a wide range of applications. Finally, the device works using the principle of MOSFET technology.
The specific data is subject to PDF, and the above content is for reference
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