VMM650-01F Allicdata Electronics
Allicdata Part #:

VMM650-01F-ND

Manufacturer Part#:

VMM650-01F

Price: $ 128.62
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET 2N-CH 100V 680A Y3-LI
More Detail: Mosfet Array 2 N-Channel (Dual) 100V 680A Chassis...
DataSheet: VMM650-01F datasheetVMM650-01F Datasheet/PDF
Quantity: 1000
2 +: $ 116.91900
Stock 1000Can Ship Immediately
$ 128.62
Specifications
Series: HiPerFET™
Packaging: Bulk 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 680A
Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 500A, 10V
Vgs(th) (Max) @ Id: 4V @ 30mA
Gate Charge (Qg) (Max) @ Vgs: 1440nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: --
Power - Max: --
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Y3-Li
Supplier Device Package: Y3-Li
Base Part Number: VMM
Description

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The VMM650-01F is a MOSFET array device in the MOSFET family of transistors specifically designed to provide designers with a standard platform that can be used when the need arises to implement multiple power MOSFETs in the same physical package. Due to its built-in parallel switch configuration, the VMM650-01F is particularly useful in distributed power systems where multiple MOSFETs are used in a controlled manner to switch high currents.

It is also used in applications such as network power systems, mobile power supplies, motor drive controllers and other high current switching systems. Its basic circuit configuration is a 3-phase bridge rectifier bridge — two of the MOSFETs can be used as the main rectifier, the third MOSFET as the active switch, and the final MOSFET as the opposite rectifier.

The three transistors of the VMM650-01F have been specially designed to ensure that they have low resistance and low on-state voltage drop. This means that the converter circuit can implement a very efficient energy conversion release, as it minimizes heat dissipation.

VMM650-01F offers excellent endurance and reliability characteristics as well. The transistors of the device have been run tested for over 5000 hours at Ta = 25°C and successfully passed the tests which gives designers confidence in its ability to meet long term use conditions.

This device is also suitable for various harsh automatic process control applications that require fast switching operation - it is capable of turning on/off in 3 → 6 μs and is able to work in high temperature 5 → 70 °C operating temperature at delfon temperature 85 ⇔ +125 °C.

In terms of its working principle, the VMM650-01F MOSFET array is designed to act as a switch in order to control the current flow in various systems. The device can switch between a low resistance mode, where current flows freely, and a high resistance mode, where current is prevented from flowing. When the device is in the high resistance state, no current will flow through the device, thus allowing power to be saved. When the switch is in the low resistance state, current will flow through the device, thus allowing the system to be powered.

In conclusion, the specific application fields for the VMM650-01F includes applications such as mobile power supplies, motor drive controllers, distributed power systems, and other high current switching systems. This device offers excellent endurance and reliability characteristics, low on-state voltage drop, and fast switching operation for efficient energy conversion release. Its working principle is such that it can act as a switch, shutting current off when need be and allowing it to flow when needed.

The specific data is subject to PDF, and the above content is for reference

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