VMM85-02F Allicdata Electronics
Allicdata Part #:

VMM85-02F-ND

Manufacturer Part#:

VMM85-02F

Price: $ 43.05
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET 2N-CH 200V 84A Y4
More Detail: Mosfet Array 2 N-Channel (Dual) 200V 84A 370W Chas...
DataSheet: VMM85-02F datasheetVMM85-02F Datasheet/PDF
Quantity: 1000
6 +: $ 39.13460
Stock 1000Can Ship Immediately
$ 43.05
Specifications
Series: HiPerFET™
Packaging: Bulk 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 84A
Rds On (Max) @ Id, Vgs: 25 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 450nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 15000pF @ 25V
Power - Max: 370W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Y4-M6
Supplier Device Package: Y4-M6
Base Part Number: VMM
Description

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The VMM85-02F is a FET Array that can be used for a wide range of applications. The device is designed for use in both low voltage and high voltage operations, as well as low power and high power operations. The primary purpose of the VMM85-02F is to provide a low on-state resistance, allowing for higher frequency operation with minimal power consumption. Additionally, the device is designed to withstand high currents and the extreme thermal conditions that can occur during high power operations.

The FET Array is composed of four CMOS activated MOSFETs, arranged in a quarter bridge configuration. The FETs are arranged in a low impedance and low capacitance pattern, which allows for higher speeds with optimum signal integrity. Each FET is provided with an internal charge pump circuit, which enables the device to operate at a relatively high Q factor and low noise levels. The FETs are also equipped with an internal temperature sensing circuit, which helps protect the device from overheating and thermal runaway.

The working principle of the VMM85-02F is relatively straightforward. When a voltage is applied to the gate of a FET in the bridge, the device will be activated. This will allow current to pass from the source to the drain of the FET, effectively allowing for AC and DC signals to be passed through the device without degradation. The internal charge pump circuit is then used to maintain a low on-state resistance, as well as to regulate the voltage across the bridge. The temperature sensing circuit then helps prevent overheating and thermal runaway by constantly monitoring the internal temperature of the device.

The wide range of applications for the VMM85-02F include low voltage and high voltage operations. It is ideal for use in audio and video systems, power control applications, and automotive applications. Additionally, the device is suitable for use in distributed power systems, LED lighting, and solar power systems. In automotive applications, the FET array is used to control power electronics, such as engine timing, camshaft and crankshaft position, as well as vehicle speed. It is also used in high power applications, such as in electric vehicles and industrial equipment.

In summary, the VMM85-02F is a FET Array that is designed for a wide range of applications. It is ideal for use in applications that require low on-state resistance, high switching speed, and high current levels. The FET array is composed of four MOSFETs that are arranged in a quarter bridge configuration, and the internal charge pump circuit is used to regulate the on-state resistance and voltage across the bridge. The device is also equipped with an internal temperature sensing circuit, which helps protect it from overheating and thermal runaway. Common applications for the FET array include audio and video systems, power control applications, automotive applications, distributed power systems, LED lighting, and solar power systems.

The specific data is subject to PDF, and the above content is for reference

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