VMM90-09P

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Gallium Nitride (GaN-on-Si) technology has revolutionized the semiconductor industry, leading to rapid growth in power electronics efficiency, power density, and operating frequencies. The VMM90-09P is one example of a GaN-on-Si power solution that combines elements of both vertical MOSFET and line-isolation-based topologies. This combination enables higher current ratings, increased power density and better thermal performance, resulting in more robust engineering designs. The VMM90-09P is an ideal solution for applications in telecom, automotive, industrial, medical, and power conversion markets. It is designed to provide up to 900V blocking voltage with a total on-state resistance of 90 mΩ. Its advanced GaN-on-Si die-on-die packaging offers superior thermal performance, while the line-die electrical isolation keeps the PMOS and NMOS components electrically isolated, making it an ideal solution for a variety of power conversion applications.The VMM90-09P offers a number of benefits over traditional power electronics solutions, including improved efficiency, higher current ratings, and superior thermal performance. Its high-density package and line-die isolation enable easier system design and implementation. In addition, its integrated line-die isolation with on-state current limit functions provides protection for the power device, allowing for higher current ratings in confined spaces. Finally, the VMM90-09P’s integrated high-speed switching capability provides faster switching times, allowing for higher frequency operations.

The VMM90-09P is built on a GaN-on-Si platform, allowing for higher power density and improved thermal performance. The device is a vertical MOSFET-based array, with a gate electrode connected to an external circuit. The VMM90-09P features an integrated extended drain structure which enables improved break-before-make switching over a wide range of drain-source voltages. This extended drain structure helps eliminate the potential for unnecessary chopping or dielectric breakdown, common in traditional MOSFET structures. The VMM90-09P also employs a deep trench isolation technology and a patented field-stop trench technique which provides superior EMI/RFI protection.

The VMM90-09P also features on-state current limit protection, designed to reduce the drain current in the event of an overcurrent fault. The on-state current limit is adjustable and can be set to a value that is both safe for the device, and provides the necessary current for the application. This feature is especially useful in applications with large current spikes, or when a high level of system protection is desired.

The VMM90-09P is an ideal solution for a variety of power conversion applications, as it can provide greater efficiency and improved thermal performance over traditional power electronics solutions. Its high-density package and innovative design make it a viable option for applications in telecom, automotive, industrial, medical, and power conversion industries. With its integrated line-die isolation and on-state current limit protection, the VMM90-09P offers superior safety and reliability, while providing higher current ratings and improved efficiency.

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