VND10B-E Allicdata Electronics
Allicdata Part #:

VND10B-E-ND

Manufacturer Part#:

VND10B-E

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: STMicroelectronics
Short Description: IC SSR HI SIDE 2CH PENTAWATT VRT
More Detail: N/A
DataSheet: VND10B-E datasheetVND10B-E Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Supply (Vcc/Vdd): Not Required
Base Part Number: VND10B
Supplier Device Package: 5-PENTAWATT
Package / Case: Pentawatt-5 (Vertical, Bent and Staggered Leads)
Operating Temperature: -40°C ~ 150°C (TJ)
Fault Protection: Open Load Detect, Over Temperature
Features: Status Flag
Input Type: Non-Inverting
Rds On (Typ): 100 mOhm (Max)
Current - Output (Max): 3.4A
Series: --
Voltage - Load: 6 V ~ 26 V
Interface: On/Off
Output Type: N-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Number of Outputs: 2
Switch Type: General Purpose
Part Status: Obsolete
Packaging: Tube 
Description

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VND10B-E Application Field and Working Principle

PMIC - Power Distribution Switches, Load Drivers

Introduction

The product VND10B-E is a low on-resistance single N-Channel MOSFET driver used in DC/DC converters and other applications requiring high speed switching. It integrates a source follower driver, an N-Channel MOSFET and associated circuitry to provide safe and reliable operation in DC/DC applications.

Application Field

The VND10B-E has a wide range of application in DC/DC converters, chargers and motor driver applications. It can be used to manage power distribution and provides safe operation in systems that require high speed switching. It can be used in automotive, industrial and consumer electronics applications.

Working Principle

The VND10B-E consists of an integrated N-Channel MOSFET, an integrated source follower driver and an integrated protection circuit. The integrated N-Channel MOSFET is used to switch the load while the integrated source follower driver is used to drive the gate of the MOSFET. The protection circuit limits the voltage, current and power to prevent any possible damage to the MOSFET.

The VND10B-E supports a wide range of supply voltages from 4.5V to 6V. It can operate over a wide temperature range from -40°C to 110°C. The input threshold of the device is adjustable from 1.5V to 3V, which makes it suitable for various applications. It has a very low quiescent current of 40μA and a maximum gate drive voltage of 10V. The VND10B-E has a typical on-resistance of 10mΩ which allows for very efficient power conversion.

Conclusion

The VND10B-E is a single N-Channel MOSFET driver used in DC/DC converters and other applications requiring high speed switching. It has a wide range of application in DC/DC converters, chargers and motor driver applications and it offers safe and reliable operation. The integrated N-Channel MOSFET and associated circuitry in the VND10B-E provides a very low on-resistance and allows for efficient power conversion.

The specific data is subject to PDF, and the above content is for reference

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