Allicdata Part #: | VND10N06-1-ND |
Manufacturer Part#: |
VND10N06-1 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET POWER 60V 10A IPAK |
More Detail: | N/A |
DataSheet: | VND10N06-1 Datasheet/PDF |
Quantity: | 1000 |
Specifications
Voltage - Supply (Vcc/Vdd): | Not Required |
Base Part Number: | VN*10N |
Supplier Device Package: | I-PAK |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Operating Temperature: | -- |
Fault Protection: | Current Limiting (Fixed), Over Temperature, Over Voltage |
Features: | -- |
Input Type: | Non-Inverting |
Rds On (Typ): | 150 mOhm |
Current - Output (Max): | 6A |
Series: | OMNIFET™, VIPower™ |
Voltage - Load: | -- |
Interface: | On/Off |
Output Type: | N-Channel |
Output Configuration: | Low Side |
Ratio - Input:Output: | 1:1 |
Number of Outputs: | 1 |
Switch Type: | General Purpose |
Part Status: | Obsolete |
Packaging: | Tube |
Description
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VND10N06-1 Application Field and Working Principle
The VND10N06-1 is a Power Distribution Switches, Load Drivers, or PMIC device used to efficiently manage the power supply and distribution of an electrical system. It is an integrated circuit device that is used to facilitate the power delivery and distribution of electrical components in system applications. It is mainly used in motor control, telecom, industrial and consumer applications.The VND10N06-1 provides ideal control in applications where high-performance and reliable power management is essential. It utilizes MOSFET technology to reduce the burden of manual switching and to automate the power distribution of an electrical system. It features low gate charge, low on-state resistance and high switching frequency, giving it the ability to handle high load currents and rapid load cycling. Its high power density and low heat dissipation capabilities make it ideal for applications that require maximum power savings.In addition, the VND10N06-1 is designed to reduce the complexity of power distribution, by combining both a high- and low-side switching MOSFET, in a single package. This design eliminates the need for additional components, such as gate drivers and additional power switches, and saves assembly time and cost.When it comes to its working principle, the VND10N06-1 is designed to use gate control signals in order to operate the high- and low-side switches, both in parallel and separately. The high-side and low-side switches are both connected to the gate and the source voltage, allowing the gate control signal to open, or “turn on” the MOSFET. This will then activate the high- and low-side switches and will allow a flow of current through the power distribution network.Once the current reaches its desired level, the MOSFET will then turn off, and the high- and low-side switches will be closed. The current then returns to a steady-state level, where it can once again be managed effectively by the VND10N06-1.The VND10N06-1 is one of the most efficient and reliable devices for managing power supply and distribution for the most demanding of applications. Its superior performance, high power density and low heat dissipation are what make this device so attractive for industrial, telecommunications and consumer applications. In addition, its small package size and low pin count make it an ideal choice for design flexibility, making this device one of the most sought after PMIC solutions for efficient power management.The specific data is subject to PDF, and the above content is for reference
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