VND10N06-E Allicdata Electronics
Allicdata Part #:

VND10N06-E-ND

Manufacturer Part#:

VND10N06-E

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: STMicroelectronics
Short Description: MOSFET OMNIFET 60V 10A DPAK
More Detail: N/A
DataSheet: VND10N06-E datasheetVND10N06-E Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Voltage - Supply (Vcc/Vdd): Not Required
Base Part Number: VN*10N
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature: --
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Features: --
Input Type: Non-Inverting
Rds On (Typ): 150 mOhm
Current - Output (Max): 6A
Series: OMNIFET™, VIPower™
Voltage - Load: --
Interface: On/Off
Output Type: N-Channel
Output Configuration: Low Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Packaging: Tube 
Description

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VND10N06-E is a Power Distribution Switch, Load Driver manufactured by Vishay semiconductor. It is used in several different applications including automotive, medical, industrial, and power electronic applications. It is designed to provide fast switch-ing and low on-state resistance which make it suitable for automotive, medical and industrial applications. Additionally, its low power consumption makes it suitable for power electronic applications.The VND10N06-E is a single high-side power MOSFET with wide range of applications in the power distribution segment. Its maximum drain current is 10A and maximum drain−source voltage is 60V. Its total power dissipation span around 3.3 W with an on-resistance 0.45 Ω max. It is provided with two selectable VINs of 2.7V and 3.3V and one disable pin. Its output voltage range is between 4V and 60V, and it can be enabled or disabled with active high/low. It provides built-in current sensing for current limiting, and it can withstand a reverse voltage up to 60V. The working principle of VND10N06-E is that it is a current-mode control design. When the input vol-tage is greater than the upper threshold, the output is turned on by the internal PMOS FET. When the internal PMOS is on, it will in turn control the Iout and cut off the output when Iout exceeds the current limit set by RSET. An external resistor is needed to set the current limit value that needs to be adjusted to the required application. When the input voltage is below the lower threshold, the output will be switched off and it will be clamped to a voltage of close to ground. This ensures that the output is safely off.VND10N06-E is designed for applications requiring reliable power switching in a wide range of current loads. It is suitable for automotive, medical and industrial power distribution applications, as well as for power electronic applications. It has low on-state resistance and high switching speed, which makes it an ideal choice for power management systems. Its current limit and reverse-voltage protection makes it a reliable and robust power switch.In conclusion, the VND10N06-E is a high-side power distribution switch, load driver manufactured by Vishay semiconductor. It has a wide range of applications in power distribution and power electronic applications. It provides fast switching, low on-state resistance, current sensing and reverse voltage protection. Its low power consumption makes it suitable for power electronic applications while its high switching speed and current protection makes it suitable for automotive, medical and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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