VNS1NV04P-E

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1. Describe

VNN1NV04P-E, VNS1NV04P-E are monolithic devices designed for STMicroelectronics VIPower M0-3 technology designed to replace standard power MOSFETs for DC to up to 50 kHz applications. Built-in thermal shutdown, linear current limit and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pins.

2. Feature

    1. Linear current limit

    2. Thermal shutdown

    3. Short circuit protection

    4. Integrated gripper

    5. Low current drawn from input pins

    6. Diagnostic feedback via input pins

    7. ESD protection

    8. Direct access to gates of power MOSFETs (analog drive)

    9. Compatible with standard power MOSFETs

3. Protective function

During normal operation, the input pin is electrically connected to the internal gate to power the MOSFET through a low impedance path. The device then behaves like a standard power MOSFET and can be used from DC up to 50 kHz. From the user's point of view, the only difference is the small DC current IISS (100 µA typical) flows into the input pin to power the internal circuitry. The device integrates:

1. Overvoltage Clamp Protection: Internally set to 45 V, and the characteristics of a rugged avalanche power MOSFET stage give the device unmatched robustness and power handling capabilities. This feature is very important when driving inductive loads.

2. Linear current limiter circuit: Limits the drain current ID to the Ilim voltage regardless of the input pin. When the current limiter is active, the device operates in the linear region, so the power dissipation may exceed the capability of the heat sink. The case and junction temperatures increase, and if this phase continues long enough, the junction temperature may reach the overtemperature threshold Tjsh.

3. Over temperature and short circuit protection: These are based on sensing chip temperature and are not dependent on input voltage. Sensing components on the chip in the power stage area ensure fast and accurate detection of junction temperature. Overtemperature shutdown occurs in the range of 150 to 190 °C, a typical value of 170 °C. The device automatically restarts when the chip temperature drops about 15 °C below the shutdown temperature.

4. Status Feedback: In overtemperature fault conditions (Tj > Tjsh), the device attempts to sink diagnostic current Igf through the input pins to indicate fault health. If driven from a low impedance source, this current can be used to warn the device to shut down the control circuit. If the drive impedance is high enough, the input pin will drop to 0 V if the input pin driver cannot supply the current Igf. However, this does not affect device operation: no input pin driver capability is required for current, other than to provide normal operation to drive the current IISS.