VNS1NV04TR-E Allicdata Electronics

VNS1NV04TR-E Integrated Circuits (ICs)

Allicdata Part #:

497-3317-2-ND

Manufacturer Part#:

VNS1NV04TR-E

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: STMicroelectronics
Short Description: MOSFET POWER AUTOPROTECT 8-SOIC
More Detail: N/A
DataSheet: VNS1NV04TR-E datasheetVNS1NV04TR-E Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Voltage - Supply (Vcc/Vdd): Not Required
Base Part Number: VN*1NV
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Operating Temperature: -40°C ~ 150°C (TJ)
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Features: --
Input Type: Non-Inverting
Rds On (Typ): 250 mOhm (Max)
Current - Output (Max): 1.7A
Series: OMNIFET II™, VIPower™
Voltage - Load: 36V (Max)
Interface: On/Off
Output Type: N-Channel
Output Configuration: Low Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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VNS1NV04TR-E is a three-channel N-channel MOSFET, which belongs in the range of power management integrated circuit (PMIC) – power distribution switches, load drivers. It is especially used in the space-limited system environment, such as the servers, cellular base stations and data centers. The design of VNS1NV04TR-E allows users a great ease of use. Thanks to its package outline and pin assignment, implementing complicated layout becomes a much easier task.

This MOSFET is composed of multiple voltage-controlled switches, which will open and close according to the control information sent to it through its input ports. These switches are configured in different series and parallel configurations to achieve different power distribution. Furthermore, it also has power-loss detection and external P-Channel MOSFET circuitry, which is capable of indicating overload in the system and automatically shut down the power distribution until reset.

The most known application for VNS1NV04TR-E is in the power distribution systems. It is designed to act as a replacement for the conventional circuit breaker, which are inefficient and have a large body size. VNS1NV04TR-E is a much smaller and efficient solution to the same purpose. This MOSFET also features a high degree of integration, which makes it very suitable for compact designs, such as those in the notebook, computer, and different types of embedded systems, like electric cars and automated assembly machines.

The working principle of VNS1NV04TR-E is fairly simple. The gate voltage is applied to the input ports of the circuit, which will then activate or deactivate the switches inside the device, depending on the level of the gate voltage. When the gate voltage applied is low, the switches are deactivated and no power is allowed to pass through. When the gate voltage applied is high, then the switch is activated and the power will flow through it.

The main advantage of the VNS1NV04TR-E is that it is capable of providing a high level of integration into a single package. This will allow for a large number of power distribution switches and load drivers to be placed inside small computations, thus saving a great deal of space and energy. Furthermore, its capability of power-loss detection places it in a high demand in the market, as it can effectively detect any anomalies in the system and shut it down until reset, thus protecting the system from any major damage.

In conclusion, VNS1NV04TR-E is a great power management device, which can be used to provide a large degree of integration and high levels of power-loss detection into a single integrated circuit. As a result, it has found a large number of applications in the aerospace, automotive and industrial industries, due to its small size, yet high performance and reliability.

The specific data is subject to PDF, and the above content is for reference

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