VQ1001P-E3 Allicdata Electronics
Allicdata Part #:

VQ1001P-E3-ND

Manufacturer Part#:

VQ1001P-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET 4N-CH 30V 0.83A 14DIP
More Detail: Mosfet Array 4 N-Channel 30V 830mA 2W Through Hole...
DataSheet: VQ1001P-E3 datasheetVQ1001P-E3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
FET Type: 4 N-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 830mA
Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 200mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: --
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: --
Supplier Device Package: 14-DIP
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

VQ1001P-E3 is an array of high performance logic level FETs with gate source voltage rating of ±30V. It has four N-channel FETs in a single package with a typical RDS(on) resistance of 0.25ohm. Its rated drain current is 25A, and the operating temperature range is -55℃ to 150℃. It is a highly integrated logic level power transistor with enhanced SOA, avalanche and ESD performance.

The VQ1001P-E3 can be used in applications such as power management, battery powered devices, analog circuits and motor controls. It is ideal for switching circuits and other applications where a combination of high power, low voltage, and high speed is required. Additionally, it provides excellent device protection for a wide range of applications, including automotive, industrial and personal electronics.

The working principle of VQ1001P-E3 is simple. When the gate voltage is lower than the source voltage, the internal FETs are turned off, which reduces drain-source resistance, and this generates high current flow from drain to source. On the other hand, when the gate voltage is higher than the source voltage, the internal FETs are turned on, which increases drain-source resistance, and this reduces current flow. As a result, the VQ1001P-E3 can be used to control the current flow in a circuit, providing efficient power management.

In addition, VQ1001P-E3 has the unique ability to sense its own current. This allows it to monitor the current flow and adjust the gate voltage automatically to maintain a given current level. This enables the transistor array to utilize its full range of applications with very little additional circuitry. Moreover, it also helps reduce energy consumption.

VQ1001P-E3 is an ideal device for applications that require high power, low voltage, and high speed. Its compact size and simplicity makes it easy to integrate into existing systems, providing for efficient power management and device protection. Moreover, the device’s ability to self-monitor current flow ensures optimal performance in any application.

The specific data is subject to PDF, and the above content is for reference

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