Allicdata Part #: | VQ3001P-E3-ND |
Manufacturer Part#: |
VQ3001P-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N/2P-CH 30V 14DIP |
More Detail: | Mosfet Array 2 N and 2 P-Channel 30V 850mA, 600mA ... |
DataSheet: | VQ3001P-E3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | 2 N and 2 P-Channel |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 850mA, 600mA |
Rds On (Max) @ Id, Vgs: | 1 Ohm @ 1A, 12V |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 110pF @ 15V |
Power - Max: | 2W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Package / Case: | -- |
Supplier Device Package: | -- |
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VQ3001P-E3 is an array of arrays of MOSFETs (metal-oxide-semiconductor field-effect transistors) that can be used in a variety of applications. The device consists of four arrays of four transistors that are connected internally and share a voltage supply. Each device has a Source, a Drain, and a Gate terminal and is used mainly to control the flow of current in circuits. This device is also popularly used as a switch in circuits. As the voltage applied to the drain and source changes, the current flow through the device also changes, allowing for precise control of current and voltage across the device.
VQ3001P-E3 arrays are mainly used in high power applications, such as motor control and circuit protection. As the device consists of four arrays of four transistors, it can be used in applications with high power requirements. In addition to this, the device can also be used in applications with high dynamic loads and high switching speeds as all four transistors can be used in parallel to provide higher current carrying capacities.
The source and the drain of the VQ3001P-E3 have an integrated power transistor that helps to provide a low-resistance path between the source and the drain, thus reducing the on-state resistance of the device. This power transistor also helps to reduce the amount of power dissipation in the device, thus making it more efficient.
The working principle of the VQ3001P-E3 is quite straightforward. When a voltage is applied to the gate of the device, a current is allowed to flow between the source and the drain. The amount of current is controlled by the gate voltage and can be increased or decreased as needed. The gate voltage is also used to control the voltage drop across the source and the drain, thus allowing for more precise control of the current flow.
In general, the VQ3001P-E3 is an efficient and reliable device that can be used in a wide variety of applications. It can be used in motor control, circuit protection, and high-power applications. It is also relatively easy to use and can be used in applications with high current and/or high switching speeds. As such, it is an ideal device for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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VQ3001P-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2N/2P-CH 30V 14DIP... |
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