VT4045BP-M3/4W

Series:	TMBS®
Packaging:	Tube
Part Status:	Active
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	45V
Current - Average Rectified (Io):	40A (DC)
Voltage - Forward (Vf) (Max) @ If:	670mV @ 40A
Speed:	Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr:	3mA @ 45V
Capacitance @ Vr, F:	--
Mounting Type:	Through Hole
Package / Case:	TO-220-2
Supplier Device Package:	TO-220AC
Operating Temperature - Junction:	200°C (Max)

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Introduction

VT4045BP-M3/4W is a rectifier diode, a two-layer semiconductor device with a low cost, and excellent quality. It can be used for a wide range of applications, such as power conversion, rectification, flyback topologies, and battery chargers. This diode has a wide range of characteristics, including a low forward voltage drop, high breakdown capability, and a low junction capacitance.

Application Field

VT4045BP-M3/4W is mainly used for rectification in applications that require a higher efficiency, such as power switching converters, DC-DC converters, and uninterruptible power supplies. The low profile, small size, and fast switching capability of this diode make it ideal for use in high density, power-conversion circuits. In addition, the diode can be used in applications such as solar and wind power systems, or in automotive systems, where high reliability and low power consumption are paramount considerations.

Working Principle

The VT4045BP-M3/4W is a two-layer, Schottky barrier diode, consisting of an n-type semiconductor material and a p-type semiconductor material. When a voltage is placed across its terminals, a forward-biased diode current flows from the n-type layer to the p-type layer. This diode forward current is constant and is directly proportional to the applied voltage. The reverse bias current of the diode, from the p-type layer to the n-type layer, is small and is inversely proportional to the applied reverse voltage.When the forward voltage applied to the diode is more than the breakover voltage of the diode, the diode will become forward-biased and a forward current will flow through it. The current has a constant, mild slope, and is known as the V-I (voltage-current) diode characteristic curve. This characteristic curve is important as it affects the efficiency and power consumption of power conversion systems.

Conclusion

The VT4045BP-M3/4W is a two-layer Schottky barrier diode, with a low forward voltage drop, high breakdown voltage, and a low junction capacitance. It is used in power switching converters, DC-DC converters, and uninterruptible power supplies due to its low profile, small size, and fast switching capability. Furthermore, the diode’s V-I characteristics affect the efficiency and power consumption of power conversion systems.

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