Allicdata Part #: | VT4060C-M3/4W-ND |
Manufacturer Part#: |
VT4060C-M3/4W |
Price: | $ 0.88 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE SCHOTTKY 60V 20A TO-220AB |
More Detail: | Diode Array 1 Pair Common Cathode Schottky 60V 20A... |
DataSheet: | VT4060C-M3/4W Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.79350 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tube |
Part Status: | Active |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 60V |
Current - Average Rectified (Io) (per Diode): | 20A |
Voltage - Forward (Vf) (Max) @ If: | 620mV @ 20A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 6mA @ 60V |
Operating Temperature - Junction: | -40°C ~ 150°C |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
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The VT4060C-M3/4W is a diode array designed for use in various rectifier applications. It is capable of providing current up to 1.3A while operating at a maximum voltage of 1.2V. It features an ultra-fast switching action, low junction capacitance, low leakage current and wide capacitive load range. The diode array is designed to be used in switchmode power supplies, DC-DC converters, high voltage power supplies, and other similar circuits.
The VT4060C-M3/4W is composed of four individual N-type MOSFETs connected in parallel. These transistors serve as the active components in the array, providing both rectification and protection from over current, over voltage and short circuit events. By careful selection of the transistor sizes and current ratings, the diode array is able to provide a very efficient rectification process, allowing for a high current and voltage conversion ratio. This high efficiency is what makes the VT4060C-M3/4W a desirable choice for use in many different applications.
The VT4060C-M3/4W is also rated for low voltage over temperature protection. Should the gate voltage being used to drive the array increase beyond a certain point, the transistors will enter into a safe-operating region and prevent further current flow. This ensures that the diode array will continue to operate as designed with no damage occurring due to over current or overvoltage events.
At the core of the operation of the VT4060C-M3/4W is its internal parallel structure. Each of the N-type MOSFETs in the diode array acts as a rectifier, allowing current to flow with one of its two active terminals functioning as a cathode and the other as an anode. By controlling the magnitude of the gate voltage, the diode array is able to effectively modulate the current level of the entire array. This allows the VT4060C-M3/4W to effectively service rectifier applications with varying current levels.
In addition to the low on-resistance of the rectifier, the VT4060C-M3/4W is also characterized by its high switching speed. This allows for short recovery times, allowing for higher peak current ratings and higher efficiency when used in high power applications. The diode array also features low junction capacitance, which is beneficial to low frequency applications as it allows for faster charging or discharging of the output.
The VT4060C-M3/4W is ideally suited for use in a variety of applications like automotive, industrial control, medical, and telecom. It can be used as a drop-in replacement for standard diodes and/or as a cost-effective solution for custom power conversion systems. In addition, the VT4060C-M3/4W can be used for both standard and higher frequency applications due to its low junction capacitance.
The VT4060C-M3/4W is an advanced diode array designed to provide efficient rectification and excellent switching speed at a very low cost. Its additional features such as over temperature and over current protection make it an attractive choice for a wide variety of rectifier applications. Its parallel structure allows it to easily be dropped into existing applications without requiring modification, while its high switching speed makes it suitable for a wide range of applications, including those which require higher current levels and higher peak roles.
The specific data is subject to PDF, and the above content is for reference
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