VTVS11ASMF-M3-18 Circuit Protection

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TVS (transient voltage suppressor) diodes provide a surge protection function that is critical for protecting motor control and power electronic circuits from disruptive voltage events. The VTVS11ASMF-M3-18 is a TVS diode which is designed specifically for use in motor drives, inverters, and power supplies. This diode has a breakdown voltage of 11V and utilizes a PRTF technology to ensure an optimal balance between low clamping voltage and high surge capability.

The VTVS11ASMF-M3-18 has a low capacitance of 0.05 pF, making it suitable for high-speed switching applications, such as motor drives and inverters. Its low peak pulse current of 48A and low leakage current of 0.03mA also make it ideal for power supplies or any other device that requires a robust surge protection solution.

In terms of its construction, the VTVS11ASMF-M3-18 is a SOT-23 3-pin device. It is a dual diode with a common anode and cathode, meaning that it can be used in either positive or negative voltage applications. Both the anode and cathode are connected internally through a resistor, allowing the diode to regulate the voltage across its terminals.

The main application field for the VTVS11ASMF-M3-18 is motor control and power electronic circuits, though it can also be used in other applications such as AC-to-DC and DC-to-DC converters. Its wide operating temperature range of -40°C to 170°C makes it suitable for applications where high temperature operation is required.

The working principle of the VTVS11ASMF-M3-18 is relatively simple and is based on the P-type region of the diode reverse biasing. When the voltage across the diode exceeds the breakdown voltage of 11V, a clamping voltage is established, effectively limiting the voltage across the device and preventing damage to the downstream components. The resistor in the diode also helps to limit the surge current.

In summary, the VTVS11ASMF-M3-18 is a TVS diode designed specifically for use in motor drives, inverters, and power supplies. The diode utilizes a PRTF technology and has a low capacitance and low peak pulse current making it perfect for high-speed switching applications. Its wide operating temperature range makes it suitable for applications where high temperature operation is required. The working principle of the diode is based on the P-type region of the diode reverse biasing and helps to limit voltage and surge current.

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