VTVS58ASMF-HM3-18 Allicdata Electronics
Allicdata Part #:

VTVS58ASMF-HM3-18-ND

Manufacturer Part#:

VTVS58ASMF-HM3-18

Price: $ 0.08
Product Category:

Circuit Protection

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: TVS DIODE 57.6V 98V DO219AB
More Detail: N/A
DataSheet: VTVS58ASMF-HM3-18 datasheetVTVS58ASMF-HM3-18 Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
50000 +: $ 0.06615
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Series: Automotive, AEC-Q101, TransZorb®
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 57.6V
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 98V
Current - Peak Pulse (10/1000µs): 3.89A
Power - Peak Pulse: 400W
Power Line Protection: No
Applications: Automotive
Capacitance @ Frequency: 245pF @ 1MHz
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Description

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TVS - Diodes protect electronic circuits from overvoltage due to electrostatic discharge (ESD), lightning surges, voltage transients, and other causes. Many different models are available, each suited for a different application and voltage rating. The VTVS58ASMF-HM3-18 is one such model, offering a 5.8V protection rating.

This diode is specifically designed for high-speed signal line protection against overvoltage. It has a transient voltage suppression capability of up to 20A with an ultra-fast response (<= 10ns). This makes it a great choice for protecting sensitive data lines, such as USB or Ethernet cables.

The diode is housed in a SOT-883 package, making it very compact for applications where space is at a premium. It also has low leakage current, low capacitance, and a low capacitive coupling coefficient, making it ideal for data lines in high-speed applications.

The VTVS58ASMF-HM3-18 uses avalanche breakdown as its working principle. This is a process whereby an avalanche breakdown occurs when the electric field strength is high enough for electrons to break away from their parent atoms and cascade through the semiconductor material. When this happens, a large number of electrons are suddenly moving through the material, resulting in a large current. This current is then used to protect the underlying circuit.

The diode will typically begin to break down at around 5.8V, which is lower than the voltage rating applied to its contacts. When this happens, the current flowing through it increases significantly, thus limiting the voltage on the input device. This protection is especially critical for high-speed data lines, where a sudden increase or decrease in voltage on the data line could cause errors.

In applications where ESD pulses are a concern, the VTVS58ASMF-HM3-18 is also capable of providing protection against these. Due to the lower breakdown voltage, as compared to other models, the diode can protect against strong ESD pulses without affecting the normal work of the underlying circuit.

Overall, the VTVS58ASMF-HM3-18 is a good option for protecting sensitive data lines from overvoltage and ESD pulses. With its fast response time, low leakage current, low capacitance, and low capacitive coupling coefficient, it is a great choice for high-speed applications.

The specific data is subject to PDF, and the above content is for reference

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