W25Q128JVBIM

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The W25Q128JVBIM is a memory device from Winbond, categorized under their family of Serial Flash memory. It is generally available in 8-pin SOIC, 8-pin WSON, and 8-pin SSOP packages, making it very convenient in terms of size and cost. The device incorporates a dual-bank architecture, enforcing a two-bank flash memory. This ensures good write performance and data integrity along with better electrical parameters.

This device provides a sector erase size of 64 KB, a block erase size of 256 KB, and a chip erase size of 32 MB. It has a fast serial peripheral interface (SPI) clock of up to 104 MHz and a high-speed read rate of 80 MHz. This makes it fast enough in read and write operations. Its low pin count and wide voltage range of 1.8V to 3.3V add to its advantages.

This device is used in numerous applications, including customer electronics, industrial, medical, automotive and other embedded applications. In the customer electronics application field, its features make it suitable for tablets, PDAs, e-book readers, MP3 players, digital cameras and set-top-boxes.

In the automotive field, this device is used for multimedia and navigation systems, as well as for audio and climate control systems. It is also used for medical devices and systems such as patient monitors, portable medical devices, and patient recorders.

The working principle of this device involves the transfer of data from an external device to the internal memory. This is achieved by using a serial peripheral interface (SPI) or a Dual SPI (dSPI) bus. The transfer operation involves the command and data exchange between the master and the device, via the SPI bus. The data is stored in the internal memory until it is removed or reduced by commands received from the master.

The memory of the W25Q128JVBIM is divided into two banks; the first bank is 128 megabytes and the second bank is 64 megabytes. The data is written in a page of 256 bytes. To write data to the first bank, the appropriate number of pages can be identified by the commands. Once the page is identified the data is written to it and it takes approximately 2 ms to write a single page. For the second bank, 64 pages can be written in the same amount of time.

The memory device can also be read from. To read from the first bank, the command is sent along with the address and the data is transferred from the internal memory and displayed. The same process is used for the second bank, but it takes 6 ms to read a single page.

The W25Q128JVBIM is an excellent device for applications where a low pin count and wide voltage range is important. It has a fast SPI clock and useful memory size for applications. It is used in various areas such as customer electronics, medical, automotive, and industrial applications. The device works by being commanded by an external device, to write, erase and read data.

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