Allicdata Part #: | W25Q20EWSNIGTR-ND |
Manufacturer Part#: |
W25Q20EWSNIG TR |
Price: | $ 0.32 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Winbond Electronics |
Short Description: | IC FLASH 2M SPI 104MHZ 8SOIC |
More Detail: | FLASH - NOR Memory IC 2Mb (256K x 8) SPI 104MHz 8... |
DataSheet: | W25Q20EWSNIG TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.32000 |
Specifications
Series: | SpiFlash® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 2Mb (256K x 8) |
Clock Frequency: | 104MHz |
Write Cycle Time - Word, Page: | 800µs |
Memory Interface: | SPI |
Voltage - Supply: | 1.65 V ~ 1.95 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Description
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Memory Applications and Working Principles of W25Q20EWSNIG TR
The W25Q20EWSNIG TR is a type of memory device. It is a part of a family of Serial Flash devices made by Winbond Electronics. This memory device is suitable for a wide range of applications, including system-on-chip designs, embedded digital video recording, flash file systems, in-system programming, digital appliances, and medical/consumer products. Furthermore, this memory device is designed to provide high performance, low pin count, and low cost. Performance Features This memory device has a variety of beneficial performance features. It has a large capacity of 1Mbit. It can be used for EEPROM replacement applications and high-density, low-cost code storage for mobile and embedded applications. Furthermore, this device is available in the SPI bus mode. In addition, this memory device has a high speed performance capability, with read speeds up to 120 MHz and standard read speeds up to 25 MHz. It also has a variety of erase/program cycles, including Block Erase of 1Kbyte, 4Kbyte, 8Kbyte, and 64Kbyte, and an entire chip erase function. Furthermore, this device can provide security features such as nonvolatile write protection, device\'s serial number lock, and an anti-tamper mechanism to prevent external or internal tampering.Electrical Features This memory device has a dual-voltage operation of 1.8V and 3.3V. It also has a flexible power supply design with a maximum current of 3.6V. Furthermore, this device can achieve a maximum frequency of 120MHz with a minimal clock speed of 0.25MHz.Applications of W25Q20EWSNIG TR Being a memory device, the W25Q20EWSNIG TR has a wide range of applications. Firstly, it can be used for system-on-chip design, as it has a low pin count and low cost. Secondly, this device can be used for embedded digital video recording, as it has an erase/program cycle, enabling recording at high speed. Thirdly, this memory device can be used for flash file systems, due to its large capacity, allowing for high density storage. Fourthly, this device can be used for in-system programming, due to its capability to achieve maximum frequencies with minimal clock speeds. Fifthly, this device can be used for digital appliances and medical/consumer products.Working Principle The W25Q20EWSNIG TR operates on the same principles as most other memory devices. Data can be read, written, or erased using the SPI bus. When data is written or erased, the device increments the address internally, and then sends the new address to the master. On the other hand, when data is read, the device sends the data stored at a particular address to the master. Furthermore, the device has two main control signals; the Chip Select (CS#) and Serial Clock (SCK). The CS# signal is used to initiate the data transfer process. When the signal is asserted, the device is placed in active mode and is ready to receive commands from the master. On the other hand, the SCK signal is used by the device to synchronize data transfer operations. In conclusion, the W25Q20EWSNIG TR is a memory device that is suitable for a wide range of applications. It has many beneficial performance, electrical, and application features, all while operating on the same principles as other memory devices.
The W25Q20EWSNIG TR is a type of memory device. It is a part of a family of Serial Flash devices made by Winbond Electronics. This memory device is suitable for a wide range of applications, including system-on-chip designs, embedded digital video recording, flash file systems, in-system programming, digital appliances, and medical/consumer products. Furthermore, this memory device is designed to provide high performance, low pin count, and low cost. Performance Features This memory device has a variety of beneficial performance features. It has a large capacity of 1Mbit. It can be used for EEPROM replacement applications and high-density, low-cost code storage for mobile and embedded applications. Furthermore, this device is available in the SPI bus mode. In addition, this memory device has a high speed performance capability, with read speeds up to 120 MHz and standard read speeds up to 25 MHz. It also has a variety of erase/program cycles, including Block Erase of 1Kbyte, 4Kbyte, 8Kbyte, and 64Kbyte, and an entire chip erase function. Furthermore, this device can provide security features such as nonvolatile write protection, device\'s serial number lock, and an anti-tamper mechanism to prevent external or internal tampering.Electrical Features This memory device has a dual-voltage operation of 1.8V and 3.3V. It also has a flexible power supply design with a maximum current of 3.6V. Furthermore, this device can achieve a maximum frequency of 120MHz with a minimal clock speed of 0.25MHz.Applications of W25Q20EWSNIG TR Being a memory device, the W25Q20EWSNIG TR has a wide range of applications. Firstly, it can be used for system-on-chip design, as it has a low pin count and low cost. Secondly, this device can be used for embedded digital video recording, as it has an erase/program cycle, enabling recording at high speed. Thirdly, this memory device can be used for flash file systems, due to its large capacity, allowing for high density storage. Fourthly, this device can be used for in-system programming, due to its capability to achieve maximum frequencies with minimal clock speeds. Fifthly, this device can be used for digital appliances and medical/consumer products.Working Principle The W25Q20EWSNIG TR operates on the same principles as most other memory devices. Data can be read, written, or erased using the SPI bus. When data is written or erased, the device increments the address internally, and then sends the new address to the master. On the other hand, when data is read, the device sends the data stored at a particular address to the master. Furthermore, the device has two main control signals; the Chip Select (CS#) and Serial Clock (SCK). The CS# signal is used to initiate the data transfer process. When the signal is asserted, the device is placed in active mode and is ready to receive commands from the master. On the other hand, the SCK signal is used by the device to synchronize data transfer operations. In conclusion, the W25Q20EWSNIG TR is a memory device that is suitable for a wide range of applications. It has many beneficial performance, electrical, and application features, all while operating on the same principles as other memory devices.
The specific data is subject to PDF, and the above content is for reference
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