W25Q256JVCIM TR

Series:	SpiFlash®
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	256Mb (32M x 8)
Clock Frequency:	133MHz
Write Cycle Time - Word, Page:	3ms
Memory Interface:	SPI
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	24-TBGA
Supplier Device Package:	24-TFBGA (6x8)

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Introduction to W25Q256JVCIM TR

The W25Q256JVCIM TR is a 25Qxx series 3V SPI Flash memory products developed by Winbond. It has 256 megabits of storage capacity, and is able to operate on a single 3V power supply. It is highly suitable for embedded devices which may require low-power, low-voltage solutions. Utilizing a unique, scalable architecture, the W25Q256JVCIM TR can achieve read/write speeds up to 80MHz and I/O of 66MHz for faster data transferring. This device also provides high ESD and Latch-up protection, making it highly reliable and robust for industrial applications.

Applications of W25Q256JVCIM TR

The W25Q256JVCIM TR is well-suited for a variety of applications which require low-power, reliable memory solutions. These include storage-rich industrial control systems, embedded systems, audio devices, network devices, automotive systems, mobile phones, medical equipment, smart meters, and many more. It is also one of the most popular solutions for system firmware storage. Furthermore, the device offers additional features like supports of 256-bit Advanced Encryption Standard (AES) to ensure secure data storage and protection.

Working Principle of W25Q256JVCIM TR

The architecture of the W25Q256JVCIM TR is a scalable flash memory with an eight-bit multiplexed address and data bus. The chip consists of four individually die-bonded 256-Mbit memories that are connected to a common I/O bus. Each memory has its own write enable (WE) and output enable (OE) pins. The read enable (RE) pins are common for all four memories. The device features a unique Sector Erase feature, where 4K bytes of memory can be erased in one go. The chip also features a built-in Erase Suspend/Resume function which allows for interruption during erase to avoid data loss. Furthermore, the W25Q256JVCIM TR is capable of providing high endurance through its Refresh in Block (RIB) feature. The device also supports quad I/O and Quad Page Programming operations for even faster programming.

Conclusion

In conclusion, the W25Q256JVCIM TR is a memory device developed by Winbond, aimed at embedded devices and applications that require reliable, low-power memory solutions. It offers 256 megabits of storage capacity and comes with features like high ESD and Latch-up protection, supports of 256-bit AES, fast read/write speeds, Sector Erase, Refresh in Block, Erase Suspend/Resume, Quad I/O and Quad Page Programming operations. This makes the W25Q256JVCIM TR an ideal choice for industrial applications such as embedded systems, audio devices, network devices, mobile phones, automotive systems, medical equipment, and smart meters.

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