W25Q32JWZPIQ TR Allicdata Electronics
Allicdata Part #:

W25Q32JWZPIQTR-ND

Manufacturer Part#:

W25Q32JWZPIQ TR

Price: $ 0.60
Product Category:

Integrated Circuits (ICs)

Manufacturer: Winbond Electronics
Short Description: IC FLASH 32M SPI 133MHZ 8WSON
More Detail: FLASH - NOR Memory IC 32Mb (4M x 8) SPI - Quad I/O...
DataSheet: W25Q32JWZPIQ TR datasheetW25Q32JWZPIQ TR Datasheet/PDF
Quantity: 1000
5000 +: $ 0.53772
Stock 1000Can Ship Immediately
$ 0.6
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (4M x 8)
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI - Quad I/O
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x5)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The W25Q32JWZPIQ TR is a non-volatile memory device that is used in a variety of applications. It is a high-performance, low-power memory device, ideal for a wide range of applications. The device is 32Mbit (4MB) in size and contains 32Mbits of memory in a small 8pin package. It is a serial flash device with three address and data lines (DQ/DI, C/S, CLK), providing fast and efficient access to stored data.

The main application field of W25Q32JWZPIQ TR is storage memory applications. It is widely used in such things as digital cameras, music players, mobile phones, PDAs and other embedded systems. In these devices, the W25Q32JWZPIQ TR is used to store data that needs to be available even when the device is powered off, such as photos, user settings, and software updates. The W25Q32JWZPIQ TR also provides a high-speed data access of up to 83MHz to quickly retrieve and store data as needed.

The working principle of W25Q32JWZPIQ TR is based on the Non-Volatile Flash Memory structure. The memory consists of a number of memory cells arranged in two-dimensional blocks. Each memory cell consists of two transistors and a floating gate. When the transistors are switched on, the floating gate charges, increasing the charge of the cell, and the cell stores one bit of information. When the cell is at a high enough voltage, the memory cell stores a logical 1; when the cell is at a low enough voltage, the memory cell stores a logical 0.

The W25Q32JWZPIQ TR also uses a unique circuit structure to provide Error Correction when data is written or read. This Error Correction technology makes the W25Q32JWZPIQ TR ideal for storage memory applications, where data must be retrieved and stored reliably.

In conclusion, the W25Q32JWZPIQ TR is a popular memory device used in storage applications. It is a high-performance, low-power device that can reliably store data and access it quickly. The unique circuit structure provides Error Correction when data is written or read, making it ideal for storage memory applications.

The specific data is subject to PDF, and the above content is for reference

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