Allicdata Part #: | W29GL512SH9BTR-ND |
Manufacturer Part#: |
W29GL512SH9B TR |
Price: | $ 3.12 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Winbond Electronics |
Short Description: | IC FLASH 512M PARALLEL 64LFBGA |
More Detail: | FLASH - NOR Memory IC 512Mb (32M x 16) Parallel 9... |
DataSheet: | W29GL512SH9B TR Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 2.83329 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 512Mb (32M x 16) |
Write Cycle Time - Word, Page: | 90ns |
Access Time: | 90ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 64-LBGA |
Supplier Device Package: | 64-LFBGA (11x13) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The W29GL512SH9B TR are an emerging type of memory device that are becoming increasingly popular amongst many industries. They are used for various types of applications, such as data storage, communications, automotive electronics, and computing. This memory device is designed to be high speed, yet low power, with a very wide operating temperature range. Additionally, it can be used as a reliable piece of long term storage. In this article, we will discuss the application areas, working principles, and advantages of using the W29GL512SH9B TR.
Application Areas:
The W29GL512SH9B TR memory device is designed for use in many types of industries. First, it can be used for data storage in the automotive industry, where it is able to store very large amounts of data in a very small space. This is especially beneficial for automotive applications, due to the limited space available. Additionally, it can be used as a RAM buffer in communications devices to store data while transmitting and receiving data. It can also be used as a low power storage device for applications such as gaming devices, where energy efficiency is crucial. Last, it can be used as a long-term storage device, thanks to its endurance and reliability.
Working Principle:
The W29GL512SH9B TR memory device utilizes charge-trapping technology, which allows for increased memory density and faster access times. Charge-trapping technology is based on the principle of trapping electrons between a oxide and a dielectric layer. The dielectric layer acts as an electret, which is an insulator capable of maintaining an electric charge. This charge can be used to control the electrical properties of the device. Each cell in the W29GL512SH9B T is programmed by changing the charge on the gate of the transistor that controls the cell.
Advantages:
The W29GL512SH9B TR memory device has several advantages over other types of memory. First, it uses much less power than other memory types, making it ideal for applications where energy efficiency is important. It also has a very wide operating temperature range, making it suitable for any environment. Additionally, its charge trapping technology makes it highly reliable and able to handle large amounts of data. Finally, its endurance makes it a great choice for long-term storage applications.
Conclusion:
The W29GL512SH9B TR is a very versatile memory device, providing an excellent alternative to traditional memory. Its many advantages make it an attractive choice for a variety of applications, from data storage to low power gaming applications. It is also highly reliable and able to withstand harsh environments. Due to its many advantages, the popularity of this memory device is only likely to increase.
The specific data is subject to PDF, and the above content is for reference
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