W632GG6KB-15 TR Allicdata Electronics
Allicdata Part #:

W632GG6KB-15TR-ND

Manufacturer Part#:

W632GG6KB-15 TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Winbond Electronics
Short Description: IC DRAM 2G PARALLEL 96WBGA
More Detail: SDRAM - DDR3 Memory IC 2Gb (128M x 16) Parallel 66...
DataSheet: W632GG6KB-15 TR datasheetW632GG6KB-15 TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Discontinued at Digi-Key
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gb (128M x 16)
Clock Frequency: 667MHz
Write Cycle Time - Word, Page: --
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-WBGA (9x13)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

W632GG6KB-15 TR is a type of low-power static random access memory (SRAM). It offers an economical solution for memory storage applications. This type of memory offers fast read and write speeds, low power consumption, and high reliability.The W632GG6KB-15 TR is ideal for applications where low power consumption, fast data access, and high reliability are important. These include medical, automotive, consumer electronics, internet of things (IoT) and networking applications. This type of memory is also suitable for use in embedded applications, such as firmware updates, program storage, and data storage.

The W632GG6KB-15 TR has a typical operating voltage range of 3.0V-3.6V and can handle a maximum operating temperature of +85℃. It has a 64KB data bus width and a 32-bit address bus. It is designed to be robust, with a long data retention time of 20 years and a maximum write/erase cycles of 10,000. The access time for this device is 25ns.

The W632GG6KB-15 TR uses a static random access memory (SRAM) structure. Each memory cell is composed of a single transistor and a capacitor. The transistor is connected to the bit line and the capacitor is connected to the word line. When the word line is asserted, charge is transferred from the transistor to the capacitor, and the cell is said to be "charged" or "set". When the word line is deasserted, the capacitor discharges, and the cell is "reset". This allows the memory cells to hold their state even when power isn\'t supplied to the device, allowing them to retain their contents.

The W632GG6KB-15 TR can be used in a variety of systems and applications. It is well-suited for use in medical systems, where the need for low power consumption, high reliability, and fast data access is essential. It is also suitable for use in automotive systems, consumer electronics, and networking applications. Moreover, this type of memory is also suitable for use in portable and embedded applications, such as firmware updates, program storage, and data storage.Overall, the W632GG6KB-15 TR is an excellent choice for applications that require low power consumption, high reliability, and fast data access. It is a reliable and efficient way to store and access data.

The specific data is subject to PDF, and the above content is for reference

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