Allicdata Part #: | W632GU8AB-11-ND |
Manufacturer Part#: |
W632GU8AB-11 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Winbond Electronics |
Short Description: | IC DRAM 2G PARALLEL 933MHZ |
More Detail: | SDRAM - DDR3 Memory IC 2Gb (128M x 16) Parallel 93... |
DataSheet: | W632GU8AB-11 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Discontinued at Digi-Key |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - DDR3 |
Memory Size: | 2Gb (128M x 16) |
Clock Frequency: | 933MHz |
Write Cycle Time - Word, Page: | -- |
Access Time: | 20ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.283 V ~ 1.45 V |
Operating Temperature: | 0°C ~ 95°C (TC) |
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The W632GU8AB-11 is a type of memory device. It named Non-Volatile Memory, which uses what is called a Field Operating Gate Transistor Memory Cell. This type of memory is used in many different applications in order to store data. Some of the main uses for the W632GU8AB-11 include but are not limited to: for backup in case of a power outage, in order to store user information, in industrial automation devices, in automotive systems, and as a form of digital content storage.
The W632GU8AB-11 operates using two different principles which make it relatively easy to use and efficient. The first principle is the fact that the device contains a Field Operating Gate Transistor (FOGTM) cell. This cell allows data to be stored on the device without needing to continually be powered or wired up in order to conserve power. The second principle is the fact that the memory cell can be programmed so that it can be written to and read from without any need for further encoding of the data.
In addition to its various uses, the W632GU8AB-11 is also relatively easy to use. The only pieces of equipment required for operation are the FOGTM cell, a programmable memory device, and an address decoder. Once all of these parts are in place, data can be written to and read from the device simply by setting up the proper circuitry. Because of its relatively simple design, it is also relatively low maintenance.
By combining the features of the FOGTM cell and the memory devices, the W632GU8AB-11 is able to offer a range of advantages for its users. Not only are the devices relatively easy to use, but they are also capable of storing large amounts of data without needing large amounts of power. This makes them ideal for applications that need to store large amounts of data while using minimal power. Additionally, they are capable of retaining data while turned off, which provides a great deal of protection against power outages.
Finally, the W632GU8AB-11 memory devices are relatively inexpensive, so they are a great option for those looking to store large amounts of data without having to break the bank. With its wide range of uses and efficient operation, it is no wonder that the W632GU8AB-11 Non-Volatile memory devices have become such a popular choice for those looking for reliable and cost-effective memory storage solutions.
The specific data is subject to PDF, and the above content is for reference
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W632GU6KB12I | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 96WBG... |
W632GU6KB-15 | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 96WBG... |
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W632GU8KB-12 | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78WBG... |
W632GU8KB12I | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78WBG... |
W632GU8KB-15 | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78WBG... |
W632GU8KB15I | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78WBG... |
W632GG8KB12I | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78WBG... |
W632GG8KB-11 TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78WBG... |
W632GG8KB-12 TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78WBG... |
W632GG8KB12I TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78WBG... |
W632GG8KB-15 TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78WBG... |
W632GG8KB15I TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78WBG... |
W632GG6KB-11 TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 96WBG... |
W632GG6KB-12 TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 96WBG... |
W632GG6KB12I TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 96WBG... |
W632GG6KB-15 TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 96WBG... |
W632GG6KB15I TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 96WBG... |
W632GU6KB-12 TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 96WBG... |
W632GU6KB12I TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 96WBG... |
W632GU6KB-15 TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 96WBG... |
W632GU6KB15I TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 96WBG... |
W632GU8KB-12 TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78WBG... |
W632GU8KB12I TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78WBG... |
W632GU8KB-15 TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78WBG... |
W632GU8KB15I TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78WBG... |
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