W632GU6MB12I TR Allicdata Electronics
Allicdata Part #:

W632GU6MB12ITR-ND

Manufacturer Part#:

W632GU6MB12I TR

Price: $ 4.09
Product Category:

Integrated Circuits (ICs)

Manufacturer: Winbond Electronics
Short Description: IC DRAM 2G PARALLEL 800MHZ
More Detail: SDRAM - DDR3 Memory IC 2Gb (128M x 16) Parallel 80...
DataSheet: W632GU6MB12I TR datasheetW632GU6MB12I TR Datasheet/PDF
Quantity: 1000
3000 +: $ 3.71800
Stock 1000Can Ship Immediately
$ 4.09
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gb (128M x 16)
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: --
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: -40°C ~ 95°C (TC)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory

W632GU6MB12I TR is an advanced type of memory with a wide array of applications and working principles. This type of memory is designed for high-performance systems with the capability of addressing and meeting requirements for high memory access speeds, low power consumption, and a large capacity of more than four gigabytes. It is built using the latest technology, making it one of the most robust and future-proofed types of memory available today.

The W632GU6MB12I TR is a type of memory, sometimes referred to as ultra-high-speed memory, which is able to reach a working frequency of up to 6.4GHz. This specific type of memory is made up of DDR3 modules that are built on a single chip and that are powered by on-die termination (ODT). These modules feature a unique asymmetric interleaving technique, which increases their overall performance significantly.

The W632GU6MB12I TR features a variety of features that make it particularly valuable in a range of industries. It is capable of providing a significantly reduced temperature profile compared to traditional memory solutions, thanks to the ODT and its low power consumption. This can help longer operational times for industrial applications and reduce the need for cooling solutions. Additionally, the use of ODT allows the memory to be over-clocked, thereby allowing it to reach even higher performance levels.

In addition to its practical applications, the W632GU6MB12I TR also offers exceptional reliability. It has been designed to resist vibrations, shocks, and corrosion, thereby ensuring that it is suitable for even the harshest environments. It also comes with ECC (Error Correction Code) support, which helps to ensure that any errors detected are automatically corrected, therefore further increasing its reliability.

The working principle of the W632GU6MB12I TR consists of four main components: a memory controller, a memory array, a memory buffer, and a power control unit. The memory controller is responsible for controlling the data flow between the memory array and the memory buffer. This is done by granting access to the memory array based on the instruction from the memory controller. The memory array then stores the data from the memory buffer.

The memory buffer is responsible for storing the data retrieved from the memory array and for writing data to be stored in the memory array. This buffer is also responsible for calculating the total data size that needs to be written in the memory array. Finally, the power control unit is responsible for adjusting the power usage of the W632GU6MB12I TR. This is done by assessing the current memory usage and ensuring that it is optimized.

Overall, the W632GU6MB12I TR provides a reliable, consistent, and high-performance memory solution. Its low power consumption, as well as its exceptional reliability, make it ideal for a wide range of applications. This type of memory is also future-proofed, meaning it is suitable for any new hardware designs that may become available in the future.

The specific data is subject to PDF, and the above content is for reference

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