Allicdata Part #: | W632GU6KB11I-ND |
Manufacturer Part#: |
W632GU6KB11I |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Winbond Electronics |
Short Description: | IC DRAM 2G PARALLEL 933MHZ |
More Detail: | SDRAM - DDR3 Memory IC 2Gb (128M x 16) Parallel 93... |
DataSheet: | W632GU6KB11I Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Discontinued at Digi-Key |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - DDR3 |
Memory Size: | 2Gb (128M x 16) |
Clock Frequency: | 933MHz |
Write Cycle Time - Word, Page: | -- |
Access Time: | 20ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.283 V ~ 1.45 V |
Operating Temperature: | -40°C ~ 95°C (TC) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
From ancient times to modern days, memory has been an integral part of life. As technology progresses, however, our ability to store and organize information on a large scale is becoming increasingly improved. This large-scale storage technology is known as W632GU6KB11I. It is a type of non-volatile memory that is designed to store large amounts of data on a small footprint.
W632GU6KB11I is used in a wide range of applications, from consumer electronics to large-scale enterprise storage systems. Consumer electronics applications include digital music players, GPS units, digital cameras, game consoles, and smartphones. For enterprise applications, W632GU6KB11I is typically used to store large amounts of data in a low-cost, energy-efficient manner. The capacity of W632GU6KB11I can range from several gigabytes to terabytes of storage space.
The main difference between W632GU6KB11I and traditional hard drives or USB drives is the way in which the memory is structured. W632GU6KB11I is an example of 3D NAND, which stands for three-dimensional NAND flash memory. In this type of memory, the memory cells are three-dimensional, allowing for more data storage in a smaller area than traditional memory types.
The working principle of W632GU6KB11I is based on the physical and chemical properties of the NAND flash memory chip. When the user wants to store data, the memory cells are charged to store the data. When reading information, the charge is dissipated and then the data is decoded. The process is highly efficient and reliable, as it does not require power to maintain the charge.
W632GU6KB11I is an attractive memory technology for many applications due to its size, cost, and performance. Its small footprint makes it ideal for applications where space is a concern, such as smartphones and tablets. Its cost-effective nature makes it appealing to enterprise-level deployments. Finally, its performance is top-notch, allowing for high speeds and superior reliability.
Overall, W632GU6KB11I is an excellent choice for a wide range of applications. Its 3D design enables it to store more data on a smaller footprint, while its efficient and reliable operation makes it a great choice for both consumer and enterprise-level applications. With its high capacity and low cost, W632GU6KB11I is sure to be a major player in the memory market for a long time.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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W632GG6KB12I | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 96WBG... |
W632GU6KB-12 | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 96WBG... |
W632GU6KB12I | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 96WBG... |
W632GU6KB-15 | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 96WBG... |
W632GU6KB15I | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 96WBG... |
W632GU8KB-12 | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78WBG... |
W632GU8KB12I | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78WBG... |
W632GU8KB-15 | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78WBG... |
W632GU8KB15I | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78WBG... |
W632GG8KB12I | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78WBG... |
W632GG8KB-11 TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78WBG... |
W632GG8KB-12 TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78WBG... |
W632GG8KB12I TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78WBG... |
W632GG8KB-15 TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78WBG... |
W632GG8KB15I TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78WBG... |
W632GG6KB-11 TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 96WBG... |
W632GG6KB-12 TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 96WBG... |
W632GG6KB12I TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 96WBG... |
W632GG6KB-15 TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 96WBG... |
W632GG6KB15I TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 96WBG... |
W632GU6KB-12 TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 96WBG... |
W632GU6KB12I TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 96WBG... |
W632GU6KB-15 TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 96WBG... |
W632GU6KB15I TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 96WBG... |
W632GU8KB-12 TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78WBG... |
W632GU8KB12I TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78WBG... |
W632GU8KB-15 TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78WBG... |
W632GU8KB15I TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78WBG... |
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W632GG6KB11I | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 933MH... |
W632GG6KB12J | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 800MH... |
W632GG6KB15J | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 667MH... |
W632GG6KB-18 | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 533MH... |
W632GG8AB-11 | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 933MH... |
W632GG8AB-12 | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 800MH... |
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