Allicdata Part #: | W947D2HBJX5E-ND |
Manufacturer Part#: |
W947D2HBJX5E |
Price: | $ 2.05 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Winbond Electronics |
Short Description: | IC DRAM 128M PARALLEL 90VFBGA |
More Detail: | SDRAM - Mobile LPDDR Memory IC 128Mb (4M x 32) Par... |
DataSheet: | W947D2HBJX5E Datasheet/PDF |
Quantity: | 1000 |
240 +: | $ 1.85566 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR |
Memory Size: | 128Mb (4M x 32) |
Clock Frequency: | 200MHz |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | 5ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.95 V |
Operating Temperature: | -25°C ~ 85°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 90-TFBGA |
Supplier Device Package: | 90-VFBGA (8x13) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
W947D2HBJX5E is one of the newest generation of computer memory technology developed by IBM. The technology works by pairing two physical memory units together, where a pressure sensitive layer is sandwiched between them. This layer acts as an intermediary between the two memory units allowing for quick and reliable memory transfers.
The major advantage of this technology is that it can offer unprecedented speed of data exchange and specific storage capacity. Furthermore, it can provide higher levels of data security and reliability than existing memory technologies. The technology can be used with both volatile and non-volatile memory, as well as with both random access and direct access memory.
The W947D2HBJX5E’s operating principle is based on the concept of cross-linking data elements. When each memory unit is paired together, the data elements within each unit are linked up, creating a cross-link between them. This means that data can be exchanged at lightning speed, allowing for data transfers that are up to 60 percent faster than existing memory technologies.
The W947D2HBJX5E technology has been designed for use in a broad range of applications. It can be used in computer systems where high speeds of memory read and write operations are necessary, such as in high-end gaming, virtual reality, and other intensive applications. It can also be used in data centres, where speed and reliability are essential. Additionally, the technology can be used in embedded systems, such as medical and automotive devices where different components need to interact in a reliable manner.
The W947D2HBJX5E technology also offers a number of advantages in terms of energy efficiency. By using layer switching techniques, the technology is able to switch between various states without consuming any power, thereby reducing the energy consumption of the memory system. This saves both power and money, making the technology an attractive option for large-scale installations.
Overall, the W947D2HBJX5E technology is one of the most advanced memory technology products on the market. It offers unprecedented speed, reliability, and energy efficiency, making it an attractive option for a variety of applications. With its flexible design, the technology can be used in a wide range of environments and applications, providing a robust and reliable memory solution for many different applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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W947D6HBHX5E | Winbond Elec... | 2.51 $ | 295 | IC DRAM 128M PARALLEL 60V... |
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W947D6HBHX5I TR | Winbond Elec... | 1.79 $ | 1000 | IC DRAM 128M PARALLEL 60V... |
W947D6HBHX6E TR | Winbond Elec... | 1.79 $ | 1000 | IC DRAM 128M PARALLEL 60V... |
W947D2HBJX5E TR | Winbond Elec... | 1.85 $ | 1000 | IC DRAM 128M PARALLEL 90V... |
W947D2HBJX5I TR | Winbond Elec... | 1.85 $ | 1000 | IC DRAM 128M PARALLEL 90V... |
W947D2HBJX6E TR | Winbond Elec... | 1.85 $ | 1000 | IC DRAM 128M PARALLEL 90V... |
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W947D2HBJX5E | Winbond Elec... | 2.05 $ | 1000 | IC DRAM 128M PARALLEL 90V... |
W947D2HBJX5I | Winbond Elec... | 2.05 $ | 1000 | IC DRAM 128M PARALLEL 90V... |
W947D2HBJX6E | Winbond Elec... | 2.05 $ | 1000 | IC DRAM 128M PARALLEL 90V... |
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