W947D6HBHX5E TR Integrated Circuits (ICs) |
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| Allicdata Part #: | W947D6HBHX5ECT-ND |
| Manufacturer Part#: |
W947D6HBHX5E TR |
| Price: | $ 2.72 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Winbond Electronics |
| Short Description: | IC DRAM 128M PARALLEL 60VFBGA |
| More Detail: | SDRAM - Mobile LPDDR Memory IC 128Mb (8M x 16) Par... |
| DataSheet: | W947D6HBHX5E TR Datasheet/PDF |
| Quantity: | 2458 |
| 1 +: | $ 2.46960 |
Specifications
| Series: | -- |
| Packaging: | Cut Tape (CT) |
| Part Status: | Active |
| Memory Type: | Volatile |
| Memory Format: | DRAM |
| Technology: | SDRAM - Mobile LPDDR |
| Memory Size: | 128Mb (8M x 16) |
| Clock Frequency: | 200MHz |
| Write Cycle Time - Word, Page: | 15ns |
| Access Time: | 5ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 1.7 V ~ 1.95 V |
| Operating Temperature: | -25°C ~ 85°C (TC) |
| Mounting Type: | Surface Mount |
| Package / Case: | 60-TFBGA |
| Supplier Device Package: | 60-VFBGA (8x9) |
Description
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Introduction
W947D6HBHX5E TR is a type of static random access memory (SRAM) that features high speed and low power operations. It is designed with a large number of addressable cells, allowing for extremely high performance data storage and retrieval. This article will explain the application field and working principle of W947D6HBHX5E TR memory.Application Field
W947D6HBHX5E TR memory is widely used in a variety of applications, such as embedded systems and high performance computers. In embedded systems, it is used for data storage and code execution. It is also used for high speed data access and retrieval, such as in digital signal processing. In a high performance computer, it can be used to provide massively parallel architecture by implementing in the form of a high-speed memory module.Working Principle
W947D6HBHX5E TR memory is composed of a large number of addressable cells, each storing one unit of data. It is connected directly to the processor, and can be read or written to in a single cycle. The data is retrieved by applying logic operations to a dedicated address register. When the logic conditions are met, the address of the desired cell is transferred to the data register, and the data is retrieved.Conclusion
W947D6HBHX5E TR is a type of high speed and low power SRAM memory. It can be used to store and retrieve data, as well as for code execution. The working principle involves applying logic operations to an address register, with the address of the desired cell being transferred to the data register and the data being retrieved from the cell.The specific data is subject to PDF, and the above content is for reference
Related Products
Search Part number : "W947" Included word is 12
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| W947D6HBHX5E TR | Winbond Elec... | 2.72 $ | 2458 | IC DRAM 128M PARALLEL 60V... |
| W947D2HBJX5I TR | Winbond Elec... | 1.85 $ | 1000 | IC DRAM 128M PARALLEL 90V... |
| W947D2HBJX5I | Winbond Elec... | 2.05 $ | 1000 | IC DRAM 128M PARALLEL 90V... |
| W947D6HBHX5E | Winbond Elec... | 2.51 $ | 295 | IC DRAM 128M PARALLEL 60V... |
| W947D2HBJX5E | Winbond Elec... | 2.05 $ | 1000 | IC DRAM 128M PARALLEL 90V... |
| W947D2HBJX6E | Winbond Elec... | 2.05 $ | 1000 | IC DRAM 128M PARALLEL 90V... |
| W947D6HBHX6E TR | Winbond Elec... | 1.79 $ | 1000 | IC DRAM 128M PARALLEL 60V... |
| W947D2HBJX5E TR | Winbond Elec... | 1.85 $ | 1000 | IC DRAM 128M PARALLEL 90V... |
| W947D2HBJX6E TR | Winbond Elec... | 1.85 $ | 1000 | IC DRAM 128M PARALLEL 90V... |
| W947D6HBHX5I TR | Winbond Elec... | 1.79 $ | 1000 | IC DRAM 128M PARALLEL 60V... |
| W947D6HBHX6E | Winbond Elec... | 1.93 $ | 1000 | IC DRAM 128M PARALLEL 60V... |
| W947D6HBHX5I | Winbond Elec... | 2.51 $ | 212 | IC DRAM 128M PARALLEL 60V... |
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W947D6HBHX5E TR Datasheet/PDF