| Allicdata Part #: | W947D2HBJX5I-ND |
| Manufacturer Part#: |
W947D2HBJX5I |
| Price: | $ 2.05 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Winbond Electronics |
| Short Description: | IC DRAM 128M PARALLEL 90VFBGA |
| More Detail: | SDRAM - Mobile LPDDR Memory IC 128Mb (4M x 32) Par... |
| DataSheet: | W947D2HBJX5I Datasheet/PDF |
| Quantity: | 1000 |
| 240 +: | $ 1.85566 |
| Series: | -- |
| Packaging: | Tray |
| Part Status: | Active |
| Memory Type: | Volatile |
| Memory Format: | DRAM |
| Technology: | SDRAM - Mobile LPDDR |
| Memory Size: | 128Mb (4M x 32) |
| Clock Frequency: | 200MHz |
| Write Cycle Time - Word, Page: | 15ns |
| Access Time: | 5ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 1.7 V ~ 1.95 V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 90-TFBGA |
| Supplier Device Package: | 90-VFBGA (8x13) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory is one of the most important components of a computer system. It stores data, programs, and other information to be used while the computer is running. W947D2HBJX5I is a type of memory integrated into a computer system that is used to store and manage data. It has a wide range of applications and a variety of working principles.
W947D2HBJX5I is a semiconductor memory chip, which uses transistors to store digital information. Compared to other forms of memory such as ROM, it is more cost-effective and has much faster operation speeds. It is usually used for the internal memory of computers, but can also be used in external memory devices such as USB flash drives. It is also used in digital cameras and other devices to store data.
W947D2HBJX5I is typically used in applications involving large amounts of data, such as graphics, image and audio processing. It is also used in embedded systems, machine vision, and robotics. Its speed and storage capacity make it ideal for these applications that require instantaneous access to large amounts of data.
The working principle of W947D2HBJX5I is based on the transistors. It consists of cells, which are transistors that can be switched on and off. The transistors are arranged in a matrix form. Each cell is connected to two metal lines called word lines, which can be used to read and write data. The cell is also connected to a charge storage layer, which stores the data until it is needed again.
Data is written to the chip by activating the word lines. The charge storage layer transfers a voltage to the transistor, which causes it to switch on or off. To read the data, the word lines are again activated and the charge state of the transistor is read. The transistors can also be used to store multiple bits of information in each cell by using multiple transistors.
W947D2HBJX5I is a versatile and cost-effective form of memory. It is used in a variety of applications, from embedded systems to graphics processing. Its speed and storage capacity make it ideal for applications that require fast access to large amounts of data. Its working principle is based on the use of transistors to store digital information, which makes it highly reliable and efficient.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| W947D2HBJX6E | Winbond Elec... | 2.05 $ | 1000 | IC DRAM 128M PARALLEL 90V... |
| W947D2HBJX5E | Winbond Elec... | 2.05 $ | 1000 | IC DRAM 128M PARALLEL 90V... |
| W947D2HBJX5I | Winbond Elec... | 2.05 $ | 1000 | IC DRAM 128M PARALLEL 90V... |
| W947D2HBJX5I TR | Winbond Elec... | 1.85 $ | 1000 | IC DRAM 128M PARALLEL 90V... |
| W947D6HBHX5E TR | Winbond Elec... | 2.72 $ | 2458 | IC DRAM 128M PARALLEL 60V... |
| W947D6HBHX5I TR | Winbond Elec... | 1.79 $ | 1000 | IC DRAM 128M PARALLEL 60V... |
| W947D6HBHX6E | Winbond Elec... | 1.93 $ | 1000 | IC DRAM 128M PARALLEL 60V... |
| W947D6HBHX5E | Winbond Elec... | 2.51 $ | 295 | IC DRAM 128M PARALLEL 60V... |
| W947D2HBJX5E TR | Winbond Elec... | 1.85 $ | 1000 | IC DRAM 128M PARALLEL 90V... |
| W947D6HBHX6E TR | Winbond Elec... | 1.79 $ | 1000 | IC DRAM 128M PARALLEL 60V... |
| W947D6HBHX5I | Winbond Elec... | 2.51 $ | 212 | IC DRAM 128M PARALLEL 60V... |
| W947D2HBJX6E TR | Winbond Elec... | 1.85 $ | 1000 | IC DRAM 128M PARALLEL 90V... |
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W947D2HBJX5I Datasheet/PDF