
W948D2FBJX5E TR Integrated Circuits (ICs) |
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Allicdata Part #: | W948D2FBJX5ECT-ND |
Manufacturer Part#: |
W948D2FBJX5E TR |
Price: | $ 3.13 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Winbond Electronics |
Short Description: | IC DRAM 256M PARALLEL 90VFBGA |
More Detail: | SDRAM - Mobile LPDDR Memory IC 256Mb (8M x 32) Par... |
DataSheet: | ![]() |
Quantity: | 2400 |
1 +: | $ 2.84760 |
Series: | -- |
Packaging: | Cut Tape (CT) |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR |
Memory Size: | 256Mb (8M x 32) |
Clock Frequency: | 200MHz |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | 5ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.95 V |
Operating Temperature: | -25°C ~ 85°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 90-TFBGA |
Supplier Device Package: | 90-VFBGA (8x13) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Technology has advanced greatly over the past decade, and the W948D2FBJX5E TR memory application field has emerged as one of the most promising developments. This technology is employed in many applications, including CRM systems, mobile devices, computers and portable media players, and can provide many advantages to users. To understand how W948D2FBJX5E TR memory works, it is necessary to understand its key features.
The W948D2FBJX5E TR memory is a type of random access memory (RAM) that is composed of nanometer scale transistors. The memory has three layers, a substrate, a control layer, and a data layer. The substrate is made of silicon, which has a low electrical conductivity, and contains the logic transistors of the memory. The control layer is composed of n-type Field-Effect Transistors (FETs) that are programmed to switch on and off the logic transistors for the purpose of reading, writing, or erasing the data. Finally, the data layer is comprised of two types of oxide materials that store the data when the FETs switch on the logic transistors.
In operation, data can be written to the memory with the help of a programming voltage. The programming voltage applied to the memory is usually anywhere from 5 to 10 volts, which activates the logic transistors, allowing electrons to flow through the circuits and modulating the information stored in the oxide materials in the data layer. The process of erasing information is even simpler, as it only requires a discharge of the programming voltage to the memory. This clears out all the stored data, and the memory is ready to take on new information.
Apart from its use in CRM systems, mobile devices, computers and portable media players, W948D2FBJX5E TR memory also has many benefits that make it ideal for use in various types of applications. Firstly, the memory can be programmed and erased multiple times without any loss in performance. This is especially useful for applications that require rapid update of information, like databases and registering systems. Another benefit of the W948D2FBJX5E TR memory is its low latency, which is the amount of time it takes for the memory to respond to a process or command. This is important for applications that require real-time responses, such as gaming and virtual reality.
In conclusion, the W948D2FBJX5E TR memory application field offers a whole range of advantages to users and developers. This type of RAM has high speed, low latency, and is suitable for multiple erasing and programming cycles. Moreover, the memory has low power consumption, making it a very economical option. With its many benefits, the W948D2FBJX5E TR technology is set to revolutionize the way we interact with the digital world.
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Part Number | Manufacturer | Price | Quantity | Description |
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W948D6FBHX6I | Winbond Elec... | -- | 1000 | IC SDRAM 256MBIT 65NM 60B... |
W948D6FBHX5I TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60V... |
W948D6KBHX5I | Winbond Elec... | 1.71 $ | 1000 | IC SDRAM 256MBIT 46NM 60B... |
W948D6KBHX5I TR | Winbond Elec... | 1.6 $ | 1000 | IC SDRAM 256MBIT 46NM 60B... |
W948D6FBHX5E | Winbond Elec... | -- | 1000 | IC DRAM 256M PARALLEL 60V... |
W948D2FBJX6E | Winbond Elec... | -- | 1000 | IC DRAM 256M PARALLEL 90V... |
W948D6FBHX6E TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60V... |
W948D6FBHX6G | Winbond Elec... | 0.0 $ | 1000 | IC SDRAM 256MBIT 65NM 60B... |
W948D2FBJX5I TR | Winbond Elec... | 2.04 $ | 1000 | IC DRAM 256M PARALLEL 90V... |
W948D6FBHX5G | Winbond Elec... | 0.0 $ | 1000 | IC SDRAM 256MBIT 65NM 60B... |
W948D6FBHX5J | Winbond Elec... | 0.0 $ | 1000 | IC SDRAM 256MBIT 65NM 60B... |
W948D2FBJX5E | Winbond Elec... | -- | 151 | IC DRAM 256M PARALLEL 90V... |
W948D2FBJX6E TR | Winbond Elec... | 2.04 $ | 1000 | IC DRAM 256M PARALLEL 90V... |
W948D6DBHX5I | Winbond Elec... | 0.0 $ | 1000 | IC SDRAM 256MBIT 65NM 60B... |
W948D6FBHX6E | Winbond Elec... | -- | 1000 | IC DRAM 256M PARALLEL 60V... |
W948D6DBHX6E | Winbond Elec... | 0.0 $ | 1000 | IC SDRAM 256MBIT 65NM 60B... |
W948D2FBJX5I | Winbond Elec... | 2.82 $ | 164 | IC DRAM 256M PARALLEL 90V... |
W948D6KBHX5E TR | Winbond Elec... | 1.6 $ | 1000 | IC SDRAM 256MBIT 46NM 60B... |
W948D6FBHX5E TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60V... |
W948D6KBHX5E | Winbond Elec... | 1.71 $ | 1000 | IC SDRAM 256MBIT 46NM 60B... |
W948D2FBJX5E TR | Winbond Elec... | 3.13 $ | 2400 | IC DRAM 256M PARALLEL 90V... |
W948D6FB2X5J | Winbond Elec... | 0.0 $ | 1000 | IC SDRAM 256MBIT 65NM 60B... |
W948D6FBHX5I | Winbond Elec... | -- | 55 | IC DRAM 256M PARALLEL 60V... |
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