W948D2FBJX5E TR Allicdata Electronics

W948D2FBJX5E TR Integrated Circuits (ICs)

Allicdata Part #:

W948D2FBJX5ECT-ND

Manufacturer Part#:

W948D2FBJX5E TR

Price: $ 3.13
Product Category:

Integrated Circuits (ICs)

Manufacturer: Winbond Electronics
Short Description: IC DRAM 256M PARALLEL 90VFBGA
More Detail: SDRAM - Mobile LPDDR Memory IC 256Mb (8M x 32) Par...
DataSheet: W948D2FBJX5E TR datasheetW948D2FBJX5E TR Datasheet/PDF
Quantity: 2400
1 +: $ 2.84760
Stock 2400Can Ship Immediately
$ 3.13
Specifications
Series: --
Packaging: Cut Tape (CT) 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 256Mb (8M x 32)
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -25°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-VFBGA (8x13)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Technology has advanced greatly over the past decade, and the W948D2FBJX5E TR memory application field has emerged as one of the most promising developments. This technology is employed in many applications, including CRM systems, mobile devices, computers and portable media players, and can provide many advantages to users. To understand how W948D2FBJX5E TR memory works, it is necessary to understand its key features.

The W948D2FBJX5E TR memory is a type of random access memory (RAM) that is composed of nanometer scale transistors. The memory has three layers, a substrate, a control layer, and a data layer. The substrate is made of silicon, which has a low electrical conductivity, and contains the logic transistors of the memory. The control layer is composed of n-type Field-Effect Transistors (FETs) that are programmed to switch on and off the logic transistors for the purpose of reading, writing, or erasing the data. Finally, the data layer is comprised of two types of oxide materials that store the data when the FETs switch on the logic transistors.

In operation, data can be written to the memory with the help of a programming voltage. The programming voltage applied to the memory is usually anywhere from 5 to 10 volts, which activates the logic transistors, allowing electrons to flow through the circuits and modulating the information stored in the oxide materials in the data layer. The process of erasing information is even simpler, as it only requires a discharge of the programming voltage to the memory. This clears out all the stored data, and the memory is ready to take on new information.

Apart from its use in CRM systems, mobile devices, computers and portable media players, W948D2FBJX5E TR memory also has many benefits that make it ideal for use in various types of applications. Firstly, the memory can be programmed and erased multiple times without any loss in performance. This is especially useful for applications that require rapid update of information, like databases and registering systems. Another benefit of the W948D2FBJX5E TR memory is its low latency, which is the amount of time it takes for the memory to respond to a process or command. This is important for applications that require real-time responses, such as gaming and virtual reality.

In conclusion, the W948D2FBJX5E TR memory application field offers a whole range of advantages to users and developers. This type of RAM has high speed, low latency, and is suitable for multiple erasing and programming cycles. Moreover, the memory has low power consumption, making it a very economical option. With its many benefits, the W948D2FBJX5E TR technology is set to revolutionize the way we interact with the digital world.

The specific data is subject to PDF, and the above content is for reference

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