Allicdata Part #: | W948D6KBHX5ETR-ND |
Manufacturer Part#: |
W948D6KBHX5E TR |
Price: | $ 1.60 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Winbond Electronics |
Short Description: | IC SDRAM 256MBIT 46NM 60BGA |
More Detail: | Memory IC |
DataSheet: | W948D6KBHX5E TR Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 1.44939 |
Series: | * |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory technology has come a long way in the past few decades. In the past, data storage was limited to mechanical devices, such as floppy discs and hard drives. However, with the advancement of microelectronics technology, new types of memory devices have been developed. W948D6KBHX5E TR is one such type of memory. It offers a variety of advantages, including small size, large capacity, low power consumption, and high speed of operation. In this article, we will discuss the application field and working principle of W948D6KBHX5E TR.
Application Field
W948D6KBHX5E TR is a Non-Volatile Memory, or NVM. It is used in a variety of applications, such as embedded systems, automotive electronics, industrial electronics, consumer electronics, and data communications. It is also used in applications that require high reliability, such as aerospace, military, and medical applications. The W948D6KBHX5E TR is ideal for storing data that needs to be maintained even if the power is interrupted, such as program code, data tables, and system parameters.
Working Principle
The W948D6KBHX5E TR is a Flash Non-Volatile Memory, or Flash NVM. It uses a floating gate transistor to store data. The floating gate transistor consists of a thin oxide layer between the gate and the source and drain terminals. The thin oxide layer traps electrons, which are used to store a specific bit of data. The stored data can be accessed by applying a voltage through a control gate to the source and drain terminals.
The W948D6KBHX5E TR is also a type of Electrically Programmable ROM, or EPROM. It is electrically erasable and programmable, meaning that it can be programmed and erased directly through the use of electrical signals, without the need to remove or replace any physical components. The programming process involves charging or discharging the floating gate transistor to either save or erase the stored data.
The W948D6KBHX5E TR offers several advantages compared to other types of memory. It is highly durable and reliable, has a high level of data security, and offers low power consumption. Additionally, it has a wide operating temperature range, making it suitable for a variety of applications. Furthermore, it is highly scalable, meaning that it can handle a large amount of data without compromising data integrity.
Conclusion
W948D6KBHX5E TR is a type of Non-Volatile Memory, or NVM. It is used in a variety of applications, such as embedded systems, automotive electronics, industrial electronics, consumer electronics, and data communications. The W948D6KBHX5E TR is a type of Flash Non-Volatile Memory, or Flash NVM, that uses a floating gate transistor to store data. It also has the added advantage of being an Electrically Programmable ROM, or EPROM. It offers a variety of advantages, including small size, large capacity, low power consumption, and a wide operating temperature range.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
W948D6FBHX5I | Winbond Elec... | -- | 55 | IC DRAM 256M PARALLEL 60V... |
W948D2FBJX5E TR | Winbond Elec... | 3.13 $ | 2400 | IC DRAM 256M PARALLEL 90V... |
W948D2FBJX5I | Winbond Elec... | 2.82 $ | 164 | IC DRAM 256M PARALLEL 90V... |
W948D2FBJX5E | Winbond Elec... | -- | 151 | IC DRAM 256M PARALLEL 90V... |
W948D6FBHX5E TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60V... |
W948D6FBHX5I TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60V... |
W948D6FBHX6E TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60V... |
W948D6FBHX5E | Winbond Elec... | -- | 1000 | IC DRAM 256M PARALLEL 60V... |
W948D6FBHX6E | Winbond Elec... | -- | 1000 | IC DRAM 256M PARALLEL 60V... |
W948D6KBHX5E TR | Winbond Elec... | 1.6 $ | 1000 | IC SDRAM 256MBIT 46NM 60B... |
W948D6KBHX5I TR | Winbond Elec... | 1.6 $ | 1000 | IC SDRAM 256MBIT 46NM 60B... |
W948D6KBHX5I | Winbond Elec... | 1.71 $ | 1000 | IC SDRAM 256MBIT 46NM 60B... |
W948D6KBHX5E | Winbond Elec... | 1.71 $ | 1000 | IC SDRAM 256MBIT 46NM 60B... |
W948D2FBJX5I TR | Winbond Elec... | 2.04 $ | 1000 | IC DRAM 256M PARALLEL 90V... |
W948D2FBJX6E TR | Winbond Elec... | 2.04 $ | 1000 | IC DRAM 256M PARALLEL 90V... |
W948D2FBJX6E | Winbond Elec... | -- | 1000 | IC DRAM 256M PARALLEL 90V... |
W948D6DBHX5I | Winbond Elec... | 0.0 $ | 1000 | IC SDRAM 256MBIT 65NM 60B... |
W948D6DBHX6E | Winbond Elec... | 0.0 $ | 1000 | IC SDRAM 256MBIT 65NM 60B... |
W948D6FB2X5J | Winbond Elec... | 0.0 $ | 1000 | IC SDRAM 256MBIT 65NM 60B... |
W948D6FBHX5G | Winbond Elec... | 0.0 $ | 1000 | IC SDRAM 256MBIT 65NM 60B... |
W948D6FBHX5J | Winbond Elec... | 0.0 $ | 1000 | IC SDRAM 256MBIT 65NM 60B... |
W948D6FBHX6G | Winbond Elec... | 0.0 $ | 1000 | IC SDRAM 256MBIT 65NM 60B... |
W948D6FBHX6I | Winbond Elec... | -- | 1000 | IC SDRAM 256MBIT 65NM 60B... |
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