Allicdata Part #: | W948D6FBHX5ETR-ND |
Manufacturer Part#: |
W948D6FBHX5E TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Winbond Electronics |
Short Description: | IC DRAM 256M PARALLEL 60VFBGA |
More Detail: | SDRAM - Mobile LPDDR Memory IC 256Mb (16M x 16) Pa... |
DataSheet: | W948D6FBHX5E TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR |
Memory Size: | 256Mb (16M x 16) |
Clock Frequency: | 200MHz |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | 5ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.95 V |
Operating Temperature: | -25°C ~ 85°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 60-TFBGA |
Supplier Device Package: | 60-VFBGA (8x9) |
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The W948D6FBHX5E TR is a type of memory that belongs to the dynamic random-access memory (DRAM) family. It is a 16megabit (Mbit) synchronous DRAM (SDRAM) device, which is developed and produced by the W948D6FBHX5E Microcontroller Corporation. The W948D6FBHX5E TR is a high-performance memory device that can offer high speed access at low power consumption.
The W948D6FBHX5E TR can be used in many applications, such as in applications that require a large amount of memory, high speed and/or low power consumption. For example, the W948D6FBHX5E TR can be used in automotive applications, medical and industrial applications. In addition, the W948D6FBHX5E TR can also be used in digital signal processor (DSP) and embedded systems, as well as telecom, digital media, and semiconductor testing applications.
The working principle of the W948D6FBHX5E TR is based on the synchronous dynamic random access memory (SDRAM). The SDRAM is a type of DRAM, which is synchronized to the processing clock of the processor or other system in which it is installed. It enables higher data throughput, low power consumption and faster access times than other types of memory. In the W948D6FBHX5E TR, access times as fast as 25ns have been achieved, and a power supply voltage as low as 1.8V is enough to provide sufficient power.
The W948D6FBHX5E TR offers multiple features such as pipelined burst read and write cycle (R/W cycle, allowing high speed burst access with low power consumption, high memory density, and high data density, which makes the W948D6FBHX5E TR a suitable solution for many embedded systems, digital signal processors and general purpose applications.
The W948D6FBHX5E TR also offers error-correction code (ECC) detection, which can detect and correct single bit error without the need to use extra memory. It also offers reduced soft error rates (SER), which further reduces the read/write latency. In addition, the W948D6FBHX5E TR offers temperature-compensated self refresh (TCSR), which maintains data integrity even at extended temperature ranges.
The W948D6FBHX5E TR is a high-performance and low-power SDRAM device, which is suitable for a variety of applications. Its features make it an ideal solution for embedded systems, telecom, digital media and semiconductor testing applications. It is a versatile device that offers fast access times, low power consumption and high data density.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
W948D6FBHX5I | Winbond Elec... | -- | 55 | IC DRAM 256M PARALLEL 60V... |
W948D2FBJX5E TR | Winbond Elec... | 3.13 $ | 2400 | IC DRAM 256M PARALLEL 90V... |
W948D2FBJX5I | Winbond Elec... | 2.82 $ | 164 | IC DRAM 256M PARALLEL 90V... |
W948D2FBJX5E | Winbond Elec... | -- | 151 | IC DRAM 256M PARALLEL 90V... |
W948D6FBHX5E TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60V... |
W948D6FBHX5I TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60V... |
W948D6FBHX6E TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60V... |
W948D6FBHX5E | Winbond Elec... | -- | 1000 | IC DRAM 256M PARALLEL 60V... |
W948D6FBHX6E | Winbond Elec... | -- | 1000 | IC DRAM 256M PARALLEL 60V... |
W948D6KBHX5E TR | Winbond Elec... | 1.6 $ | 1000 | IC SDRAM 256MBIT 46NM 60B... |
W948D6KBHX5I TR | Winbond Elec... | 1.6 $ | 1000 | IC SDRAM 256MBIT 46NM 60B... |
W948D6KBHX5I | Winbond Elec... | 1.71 $ | 1000 | IC SDRAM 256MBIT 46NM 60B... |
W948D6KBHX5E | Winbond Elec... | 1.71 $ | 1000 | IC SDRAM 256MBIT 46NM 60B... |
W948D2FBJX5I TR | Winbond Elec... | 2.04 $ | 1000 | IC DRAM 256M PARALLEL 90V... |
W948D2FBJX6E TR | Winbond Elec... | 2.04 $ | 1000 | IC DRAM 256M PARALLEL 90V... |
W948D2FBJX6E | Winbond Elec... | -- | 1000 | IC DRAM 256M PARALLEL 90V... |
W948D6DBHX5I | Winbond Elec... | 0.0 $ | 1000 | IC SDRAM 256MBIT 65NM 60B... |
W948D6DBHX6E | Winbond Elec... | 0.0 $ | 1000 | IC SDRAM 256MBIT 65NM 60B... |
W948D6FB2X5J | Winbond Elec... | 0.0 $ | 1000 | IC SDRAM 256MBIT 65NM 60B... |
W948D6FBHX5G | Winbond Elec... | 0.0 $ | 1000 | IC SDRAM 256MBIT 65NM 60B... |
W948D6FBHX5J | Winbond Elec... | 0.0 $ | 1000 | IC SDRAM 256MBIT 65NM 60B... |
W948D6FBHX6G | Winbond Elec... | 0.0 $ | 1000 | IC SDRAM 256MBIT 65NM 60B... |
W948D6FBHX6I | Winbond Elec... | -- | 1000 | IC SDRAM 256MBIT 65NM 60B... |
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