WNC15RFET Resistors |
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Allicdata Part #: | WNC15RFETR-ND |
Manufacturer Part#: |
WNC15RFET |
Price: | $ 0.30 |
Product Category: | Resistors |
Manufacturer: | Ohmite |
Short Description: | RES 15 OHM 2W 1% AXIAL |
More Detail: | 15 Ohms ±1% 2W Through Hole Resistor Axial Non-Ind... |
DataSheet: | WNC15RFET Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.27531 |
Specifications
Series: | WN |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Resistance: | 15 Ohms |
Tolerance: | ±1% |
Power (Watts): | 2W |
Composition: | Wirewound |
Features: | Non-Inductive |
Temperature Coefficient: | ±20ppm/°C |
Operating Temperature: | -55°C ~ 150°C |
Package / Case: | Axial |
Supplier Device Package: | Axial |
Size / Dimension: | 0.180" Dia x 0.449" L (4.57mm x 11.40mm) |
Height - Seated (Max): | -- |
Number of Terminations: | 2 |
Failure Rate: | -- |
Description
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Through Hole ResistorsThe WNC15RFET (annular ring fused with central tab) is a popular choice in through hole resistors due to its competitive vertical and horizontal standoff characteristics. It operates as a ‘fuse-lamp’ type device, allowing it to provide an essentially unipolar switching operation with a typical switching speed of 30μs. As the fused tab is slightly larger than a standard through-hole device, this design allows it to blend in with the circuit board making it ideal for applications where space is at a premium.The WNC15RFET is composed of a metal oxide-semiconductor field effect transistor (MOSFET) and a ceramic annular ring surrounding a conductive tab. The MOSFET is a field effect device consisting of three layers: source, channel, and drain. Voltage from the gate determines the channel’s conductivity, with the source and the drain acting as the current’s entry and exit points. When a sufficient gate voltage is applied, the channel is opened and current flows. However, the annular ring prevents the gate voltage from conducting through it, allowing the centre tab to be used as a separate connection. This feature makes the WNC15RFET ideal for applications that require both a high-side (on the device’s tab) and low-side (on the annular ring) conductors.The characteristics of the WNC15RFET are determined by the size of the annular ring, the type of MOSFET, and the diameter of the conductive tab. This specific configuration also makes the device very versatile when it comes to power ratings. It is rated for up to 5A, providing a maximum switching capacity of 400Amps (four hundred Ampères). It is also designed in such a way as to be easily expandable, allowing up to 25A current without any modifications. This capability makes the WNC15RFET an ideal choice for numerous applications.Given its compact design, the WNC15RFET is an ideal choice for applications where space is restricted. Its associated design characteristics also make the device ideal for both AC and DC voltage controls. For example, the device can be used for motorised equipment, appliances, and even lighting applications. It is ideal for semi-conductor and IC testing circuits, as well as current sensing circuits. Furthermore, its versatile design makes it suitable for other high-performance applications, such as high-speed switching, motion control devices, and pulse generators.From an environmental standpoint, the WNC15RFET is designed to minimise its environmental impact. It operates in an environmentally friendly manner by minimising heat production and reducing lead content. This device is also resistant to vibration, making it an attractive option for applications in environments of high mechanical stress.In summary, the WNC15RFET is an extremely versatile and cost effective through hole resistor device. Its compact design and expansive switching capabilities make the device ideal for a wide range of applications. The fact that it is environmentally friendly, resistant to vibration, and expandable up to 25A makes this device a top choice for tight space requirements and high performance applications.The specific data is subject to PDF, and the above content is for reference
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