XBP06V4E4GR-G Allicdata Electronics

XBP06V4E4GR-G Circuit Protection

Allicdata Part #:

XBP06V4E4GR-G-ND

Manufacturer Part#:

XBP06V4E4GR-G

Price: $ 0.14
Product Category:

Circuit Protection

Manufacturer: Torex Semiconductor Ltd
Short Description: TVS DIODE 5V 4USP
More Detail: N/A
DataSheet: XBP06V4E4GR-G datasheetXBP06V4E4GR-G Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.12817
Stock 1000Can Ship Immediately
$ 0.14
Specifications
Current - Peak Pulse (10/1000µs): --
Base Part Number: XBP06V4E
Supplier Device Package: 4-USP (1.2x1.6)
Package / Case: 4-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: --
Capacitance @ Frequency: 40pF @ 1MHz
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 70W
Series: --
Voltage - Clamping (Max) @ Ipp: --
Voltage - Breakdown (Min): 6.4V
Voltage - Reverse Standoff (Typ): 5V
Unidirectional Channels: 4
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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Transient Voltage Suppressors (TVS) are components used in many different types of electronic circuit designs. They provide protection against electrical overstress (EOS), surges, and electrical disruptions caused by cross-conduction. The XBP06V4E4GR-G is a transient voltage suppression diode, which is specifically designed for automotive industry applications. This article will discuss the application field and working principle of the XBP06V4E4GR-G.

The XBP06V4E4GR-G is a unidirectional, low-capacitance, bidirectional, low-frequency transient voltage suppression diode specifically designed for applications in the automotive industry. It is suitable for use in in-vehicle power supplies, engine control units, and other applications which require protection against electrical overstress and surges. The device is constructed out of Silicon Carbide (SiC) and features an integrated Kelvin-Mountain ground to minimize leakage current. It can handle transients up to 5A and has a breakdown voltage of 6V.

The XBP06V4E4GR-G provides protection against a variety of EOS events, including ESD, EFT, and load dump. It also provides protection against AC line transients and DC voltage transients. The device is designed to be connected directly to a DC power supply and is capable of suppressing electron transients up to ±30V. The XBP06V4E4GR-G is also very low capacitance (0.35pF) which reduces the influence on signal integrity during high-speed operation.

The operating principle of the XBP06V4E4GR-G is based on avalanche breakdown. It consists of two p-type and two n-type silicon substrate layers, which are connected with each other at the anode and the cathode. When the voltage across the diode exceeds the breakdown voltage, the electrons and holes are generated at the junction, resulting in an avalanche breakdown. This process causes an increase in current which results in a voltage drop across the diode, thus providing protection against electrical overstresses.

The XBP06V4E4GR-G is a great choice for automotive industry applications, offering a robust solution which can effectively suppress transient voltage events. It is ideal for use in in-vehicle power supplies, engine control units, and other applications which require protection against electrical overstress and surges. In addition, its low capacitance design makes it suitable for high-speed operation. All of these features make the XBP06V4E4GR-G an ideal choice for automotive applications.

The specific data is subject to PDF, and the above content is for reference

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