XP0221100L Discrete Semiconductor Products |
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Allicdata Part #: | XP0221100LTR-ND |
Manufacturer Part#: |
XP0221100L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS 2NPN PREBIAS 0.15W SMINI5 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | XP0221100L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 150MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | 5-TSSOP, SC-70-5, SOT-353 |
Supplier Device Package: | SMini5-G1 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The XP0221100L is a type of pre-biased transistor array component that is designed specifically to meet specific requirements in electronic applications. It is a type of bipolar junction transistor (BJT) array which usually consists of three or more transistors connected together to form a differential pair. These are usually combined with resistors, diodes and other components to form an active circuit with a control voltage as the input. The transistor array also helps to reduce power consumption as the overall size and power dissipation can be lowered.
The XP0221100L is primarily used as an amplifier and buffer in applications such as video and audio products, automotive systems, and computers. The device has a high-gain bandwidth of 200MHz which enables it to operate at a high frequency of up to 4GHz to meet the demands of these applications. The transistor array also has a low-voltage and high-current output stage for driving high-power loads effortlessly.
In terms of its general working principle, the XP0221100L operates through an input voltage that is applied to the gate terminals. This voltage is then transferred to the transistor base and causes it to turn on when the input voltage is high enough. This in turn allows current to flow in the collector and emitter of the transistor. As more current flows through the transistor, the output voltage and current are increased proportionally.
The XP0221100L transistor array is designed to optimize power efficiency and stability in electronic circuits. The cascode structure and pre-biased capability of the device can help reduce power consumption and avoid power instability caused by the output stage. Furthermore, the transistor array has a low-noise performance which enables it to be used in audio applications.
In summary, the XP0221100L is an advanced pre-biased transistor array which can be employed in various electronic designs. The device is well suited for video and audio applications due to its high-gain bandwidth and low-noise performance. The device ensures a low-voltage and high-current output, enabling it to drive heavy loads with ease. In addition, the pre-biased capability, cascode structure and power efficiency of the device ensure optimal and stable operation.
The specific data is subject to PDF, and the above content is for reference
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