Z4KE140A-E3/73 Allicdata Electronics
Allicdata Part #:

Z4KE140A-E3/73-ND

Manufacturer Part#:

Z4KE140A-E3/73

Price: $ 0.10
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 140V 1.5W DO204AL
More Detail: Zener Diode 140V 1.5W ±5% Through Hole DO-204AL (D...
DataSheet: Z4KE140A-E3/73 datasheetZ4KE140A-E3/73 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.08732
Stock 1000Can Ship Immediately
$ 0.1
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 140V
Tolerance: ±5%
Power - Max: 1.5W
Impedance (Max) (Zzt): 900 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 106.4V
Voltage - Forward (Vf) (Max) @ If: 1V @ 500mA
Operating Temperature: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Base Part Number: Z4KE140
Description

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The Z4KE140A-E3/73 is a single Zener diode device that is available in a SOD-87F package. It is a silicon-based rectifier and can be used in a range of applications requiring Zener breakdown diodes. Its uses range from power electronics, automotive, and home appliances to audiovisual equipment, computers, and communications.

The Z4KE140A-E3/73 is a device which utilizes the Zener effect to enable the diode to be utilised in many general purpose applications, such as voltage regulation and overvoltage protection. This device is composed of two heavily-doped opposite facing p-n junctions separated by an undoped, intrinsic layer of material. Zener diodes exhibit the Zener effect when the bias voltage is higher than the Zener voltage, a phenomenon which occurs across the junction of the diode. This voltage is fixed and can be set to a chosen level at the datasheet specification.

When a forward bias voltage is applied to the diode, current flows across the diode and causes the minority carriers to increase with increasing bias voltage. When the Zener voltage is reached, the carriers increase exponentially, breaking down the depletion region and resulting in a Zener breakdown. This Zener breakdown causes a sudden increase in current and results in a large voltage across the diode, while the voltage across the diode remains constant.

As mentioned previously, the Z4KE140A-E3/73 is suitable for applications that require Zener breakdown diodes. These applications include ESD protection, voltage regulation, overvoltage protection, and steering protection. It can also be used for clamping and protection of circuits against surge current, as a temperature measurement device as a part of temperature sensing techniques, in phase-shifting techniques, and many other applications.

In addition, this device has several useful features. It is small in size and can be easily embedded into various applications. It also has excellent surge and reverse power dissipation capabilities. It is capable of operating over a wide range of temperatures and has high frequency characteristics. Furthermore, the Z4KE140A-E3/73 features low noise and low dynamic on-resistance, making it suitable for high frequency applications.

In conclusion, the Z4KE140A-E3/73 is a single Zener diode device which is suitable for a range of general purpose applications which require a Zener breakdown diode. It is composed of two heavily-doped opposite facing p-n junctions and its key feature is the Zener effect which results in a large voltage across the diode when a bias voltage is applied. The Z4KE140A-E3/73 is suitable for applications such as ESD protection, voltage regulation, overvoltage protection, and steering protection as well as many other applications. Additionally, it features excellent surge and reverse power dissipation capabilities, low noise and dynamic on-resistance, making it suitable for high frequency applications.

The specific data is subject to PDF, and the above content is for reference

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