Allicdata Part #: | Z4KE170A-E3/73-ND |
Manufacturer Part#: |
Z4KE170A-E3/73 |
Price: | $ 0.10 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 170V 1.5W DO204AL |
More Detail: | Zener Diode 170V 1.5W ±5% Through Hole DO-204AL (D... |
DataSheet: | Z4KE170A-E3/73 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.08732 |
Specifications
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 170V |
Tolerance: | ±5% |
Power - Max: | 1.5W |
Impedance (Max) (Zzt): | 1200 Ohms |
Current - Reverse Leakage @ Vr: | 500nA @ 129.6V |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 500mA |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Base Part Number: | Z4KE170 |
Description
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Diodes - Zener - SingleZ4KE170A-E3/73 is a single zener diode produced by ON Semiconductor. With its broad forward current capability of 1.7A and breakdown voltage of 17V, it provides more reliable performance when compared with a normal zener diode in a wide range of applications. An important characteristic of this device is that it is made on a planar structure which enables it to charge quickly, making it suitable for pulse applications.The Z4KE170A-E3/73 can be used for a variety of purposes; however it is mostly used in enabling or disabling circuits. One of the most common applications is voltage clamping. In this setup, the diode is often connected in parallel to an AC line or inductive load and its negative temperature coefficient helps to maintain the peak voltage within a predetermined range. This helps to improve the stability of the circuit. Additionally, the device can be used in voltage regulation circuits such as half-wave and full-wave rectifiers where it helps to maintain the peak input voltage within certain limits. Moreover, it can also used in combination with a resistor divider to create a voltage zone detector.The diode has two main operational principles. The first is the avalanche breakdown effect, which occurs when the applied electric field exceeds a certain value and breaks the covalent bonds in the semiconductor material resulting in a large increase in current flow. This provides the necessary low on-resistance and helps the diode to discharge quickly. The second principle is the temperature dependent reverse bias effect. This occurs when the diode is reverse biased and the temperature rises above a certain value. This affects the junction barrier and increases current flow which helps reduce the peak input voltage.In conclusion, the Z4KE170A-E3/73 is an important device for determining the level of voltage to be applied to circuits. It helps to regulate the peak input voltage of the circuit, helping to maintain a stable operating environment. Its low on-resistance and quick discharge features are also useful in pulse applications. Furthermore, its wide range of forward current capability and temperature dependent reverse bias effect make it suitable for a variety of applications.The specific data is subject to PDF, and the above content is for reference
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