ZDM4206NTA Allicdata Electronics

ZDM4206NTA Discrete Semiconductor Products

Allicdata Part #:

ZDM4206NTR-ND

Manufacturer Part#:

ZDM4206NTA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET 2N-CH 60V 1A SOT-223-8
More Detail: Mosfet Array 2 N-Channel (Dual) 60V 1A 2.75W Surfa...
DataSheet: ZDM4206NTA datasheetZDM4206NTA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 1A
Rds On (Max) @ Id, Vgs: 1 Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: --
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V
Power - Max: 2.75W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-223-8
Supplier Device Package: SOT-223
Base Part Number: ZDM4206N
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The ZDM4206NTA is a highly advanced transistor array with numerous applications and a unique working principle. This device features three different FETs (Field-Effect Transistors) - a p-channel enhancement-mode MOSFET (Metal Oxide Semiconductor Field-Effect Transistor), an n-channel depletion-mode MOSFET, and an n-channel enhancement-mode MOSFET. All three FETs are incorporated on a single die and require only minimal external components to operate. The ZDM4206NTA facilitates bi-directional control over current and simplifies the design of complex switching circuits using complex enable/disable and low voltage control signals. This makes the device suitable for a wide range of uses, such as in industrial, automotive, and consumer power management applications.

The main principle behind the operation of the ZDM4206NTA is that it uses each of the three FETs (when enabled) to control the current flow to a load. The drain/source voltage of each FET dictates the current flow passing through that particular FET. The p-channel MOSFET is designed to operate in enhancement-mode and be the main current regulator in the circuit, while the two n-channel FETs are used to switch the p-channel MOSFET “on” (by controlling the voltage supplied to its gate). The depletion-mode n-channel MOSFET is used to disable the p-channel FET entirely, while the enhancement-mode n-channel MOSFET is used to fine-tune the current levels of the p-channel FET.

The ZDM4206NTA has many practical applications due to its inherently efficient design and the ability to control and regulate current levels with a minimal amount of external components. For example, it can be used in power converters, DC/DC amplifiers, LED drivers, LED headlamps, as well as automotive, industrial and consumer power management applications. It also has several advantages, including low on-state resistance, low input current, low thermal resistance, high breakdown voltage, and compatibility with low voltage control signals.

Due to its unique combination of features and benefits, the ZDM4206NTA is an ideal choice for a variety of applications. It is capable of providing a wide range of current control capabilities, and its wide operating range makes it suitable for use in different types of power management solutions. It is also designed to be resistant to ESD (electrostatic discharge), making it more reliable and durable than other devices. And because it requires minimal external components to operate, the device is cost-effective and helps eliminate the need for large multi-transistor configurational arrays.

In conclusion, the ZDM4206NTA is a highly advanced transistor array that offers versatile bi-directional current control capabilities. It is suitable for use in a wide range of applications, such as power converters, LED lighting, automotive, industrial and consumer power management. With its low on-state resistance and high breakdown voltage, the device is ideal for many industrial, automotive and consumer applications. In addition, its low cost and ease of use make it a cost-effective and reliable solution for a variety of power management requirements.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "ZDM4" Included word is 4
Part Number Manufacturer Price Quantity Description
ZDM4206NTC Diodes Incor... 0.0 $ 1000 MOSFET 2N-CH 60V 1A SOT-2...
ZDM4206NTA Diodes Incor... 0.0 $ 1000 MOSFET 2N-CH 60V 1A SOT-2...
ZDM4306NTA Diodes Incor... 0.0 $ 1000 MOSFET 2N-CH 60V 2A SOT-2...
ZDM4306NTC Diodes Incor... 0.0 $ 1000 MOSFET 2N-CH 60V 2A SOT-2...
Latest Products
AO4822L_101

MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...

AO4822L_101 Allicdata Electronics
SI5944DU-T1-GE3

MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...

SI5944DU-T1-GE3 Allicdata Electronics
SI4973DY-T1-GE3

MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...

SI4973DY-T1-GE3 Allicdata Electronics
NTMD6601NR2G

MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...

NTMD6601NR2G Allicdata Electronics
BUK7K6R2-40E/CX

MOSFET 2N-CH 56LFPAKMosfet Array

BUK7K6R2-40E/CX Allicdata Electronics
PHN210,118

MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...

PHN210,118 Allicdata Electronics