Allicdata Part #: | ZDT1053TC-ND |
Manufacturer Part#: |
ZDT1053TC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS 2NPN 75V 5A SM8 |
More Detail: | Bipolar (BJT) Transistor Array 2 NPN (Dual) 75V 5A... |
DataSheet: | ZDT1053TC Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | 2 NPN (Dual) |
Current - Collector (Ic) (Max): | 5A |
Voltage - Collector Emitter Breakdown (Max): | 75V |
Vce Saturation (Max) @ Ib, Ic: | 440mV @ 250mA, 5A |
Current - Collector Cutoff (Max): | 10nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 300 @ 1A, 2V |
Power - Max: | 2.75W |
Frequency - Transition: | 140MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-223-8 |
Supplier Device Package: | SM8 |
Base Part Number: | ZDT1053 |
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Bipolar junction transistors (BJT) are transistors based on n-p-n and p-n-p junctions. They are widely used in analog applications and power switching circuits. The ZDT1053TC is a BJT array device that combines multiple transistors into one IC package. It is used in a wide range of applications, including audio amplifiers, power conditioning and control circuits, light dimmer circuits, signal conditioning and signal processing circuits, and so on.
Overview
The ZDT1053TC is an integrated circuit containing seven NPN transistors all in one package. It is a general purpose array device that can be used in different applications. It has a built-in thermal resistors that provide better heat dissipation compared to discrete transistors. The package includes a base lead connection and two available options for emitter lead connection: common emitter or emitter follower.
Features
The most important features of the ZDT1053TC are:
- High current gain (hFE) of up to 400.
- Low interface capacitance.
- Minimum saturation voltage.
- High switching speed.
- High stability over temperature.
- High density.
Working Principle
A BJT array works similarly to a single BJT. The main difference is that in an array device the current gain of each transistor is added together. This enables the array to be more efficient when switching large currents. The array device also has a higher dielectric strength than a single BJT, making it suitable for high-voltage applications.
The working principle of a BJT array is similar to that of a single BJT. The bias voltage of the base controls the amount of current flowing between the emitter and collector. When the base voltage increases, the current increases, and when it decreases, the current decreases. This allows the user to control the output current of the device.
Applications
The ZDT1053TC is suitable for a variety of applications. It’s commonly used in audio amplifiers, power conditioning and control circuits, light dimmer circuits, signal conditioning and signal processing circuits, and so on. It can be used in power switching circuits to control the flow of large currents. It is also suitable for high-voltage applications due to its high dielectric strength.
Conclusion
The ZDT1053TC is a BJT array device that can be used for a variety of applications. It has a high current gain (hFE), low interface capacitance, and high switching speed. It also has a high dielectric strength, making it suitable for high-voltage applications. It is suitable for audio amplifiers, power conditioning and control circuits, light dimmer circuits, signal conditioning and signal processing, and other applications.
The specific data is subject to PDF, and the above content is for reference
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