ZX3CD2S1M832TA Discrete Semiconductor Products |
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Allicdata Part #: | ZX3CD2S1M832TR-ND |
Manufacturer Part#: |
ZX3CD2S1M832TA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PNP 20V 3.5A 8MLP |
More Detail: | Bipolar (BJT) Transistor PNP + Diode (Isolated) 20... |
DataSheet: | ZX3CD2S1M832TA Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP + Diode (Isolated) |
Current - Collector (Ic) (Max): | 3.5A |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 300mA, 3.5A |
Current - Collector Cutoff (Max): | 25nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 150 @ 2A, 2V |
Power - Max: | 3W |
Frequency - Transition: | 180MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-VDFN Exposed Pad |
Supplier Device Package: | 8-MLP (2x3) |
Base Part Number: | ZX3CD2S1M832 |
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Single transistors are one of the most versatile and popular components in electronics. They are often used to switch or amplify signals, control current, and provide a connection between two points. The ZX3CD2S1M832TA transistor is designed to perform these tasks and more.
The ZX3CD2S1M832TA is a bipolar junction transistor (BJT) made with an NPN construction. This type of transistor is sometimes referred to as an NPN-grounded emitter transistor, or ground-emitter BJT. This means that the base is connected to the ground and the emitter is connected to the supply voltage. The collector is then connected to the load.
BJTs have three terminals—the collector, the base and the emitter. Current flows from the collector to the emitter when the base current is increased. The amount of current that flows is determined by how much current is supplied to the base, which is controlled by the resistor.
The ZX3CD2S1M832TA is designed for applications such as audio amplifiers, power transistors, and switching circuits. They are commonly used for audio powers and voltage amplification due to their low noise and low collector-base capacitance. They can also be used in switching circuits, because of their low "on" resistance and high switching speed.
The ZX3CD2S1M832TA has a maximum collector-emitter voltage (VCE) of 32V, and a maximum continuous collector current (IC) of 1A. It has a low collector-emitter saturation voltage (VCEsat) of 0.25V, a low collector-base capacitance (Ccb) of 0.51pF, and a high current gain (hFE) of 100 to 300.
The ZX3CD2S1M832TA works by allowing current to flow from the collector to the emitter when the base current is increased. When a voltage is applied to the base, some carriers (electrons or holes) are injected and move through the base region. This creates a space-charge region and a voltage potential is set up across the base. This allows a current to flow between the emitter and collector terminals. The current is determined by the base current, which is controlled by the resistor. The transistor can then be used to amplify the voltage and/or current.
The ZX3CD2S1M832TA can be used in a variety of applications such as audio amplifiers, power transistors, and switching circuits. It has a low collector-emitter saturation voltage, a low collector-base capacitance, and a high current gain. It is designed for high-current applications and has a maximum collector current of 1A.
The specific data is subject to PDF, and the above content is for reference
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