ZX3CDBS1M832TA Discrete Semiconductor Products |
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Allicdata Part #: | ZX3CDBS1M832TATR-ND |
Manufacturer Part#: |
ZX3CDBS1M832TA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 20V 4.5A 3X2MM 8MLP |
More Detail: | Bipolar (BJT) Transistor NPN + Diode (Isolated) 20... |
DataSheet: | ZX3CDBS1M832TA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN + Diode (Isolated) |
Current - Collector (Ic) (Max): | 4.5A |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Vce Saturation (Max) @ Ib, Ic: | 270mV @ 125mA, 4.5A |
Current - Collector Cutoff (Max): | 25nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 2A, 2V |
Power - Max: | 3W |
Frequency - Transition: | 140MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-VDFN Exposed Pad |
Supplier Device Package: | 8-MLP/DFN (3x2) |
Base Part Number: | ZX3CDBS1M832 |
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A ZX3CDBS1M832TA transistor is a NPN (negative-positive-negative) type bipolar transistor used commonly in applications that require switching, signal amplification, emulation of current sources and current sinks, and even a signal retentive memory. This particular type of transistor is used in a wide array of applications, including radios, amplifiers, oscillators, frequency changers, and signal retentive memories.In general, a bipolar transistor is composed of three terminals; collector, base and emitter. The collector terminal is responsible for the collection of electrons emitted by the emitter, while the base is responsible for controlling the current flow of the collector. The emitter then releases the electrons into a surrounding medium, such as an electric field or a heat sink.When voltage is applied to the ZX3CDBS1M832TA, the base emits electrons, which move towards the collector terminal. At the same time, holes are also emitted from the collector, and the collected electrons and holes then join with each other and create a current. The amount of current created depends on the amount of voltage applied to the base.The ZX3CDBS1M832TA can be used for either PNP (positive-negative-positive) or NPN type transistor structures, depending on the desired application. For NPN, the base can be used to control the current of the collector, while in PNP, the current flow is controlled by the emitter. The base also serves as an intermediate layer between the emitter and collector and enables the transistor to become even more efficient as an amplifier and switch.The ZX3CDBS1M832TA also offers various other features and applications, such as RF (radio frequency) switching, amplifier emulating, signal attenuation, high-gain current regulation, among others. It can also be used in medical equipment, communication systems, and industrial automatic controllers. The ZX3CDBS1M832TA is a very reliable device and is capable of withstanding high temperatures, fluctuating voltage, and humidity. It is also resistant to vibration, impact, and other harsh environmental conditions. As such, it can be used for a variety of applications.Overall, the ZX3CDBS1M832TA is a very versatile and reliable NPN type bipolar transistor and can be used in a wide variety of applications across many different industries. It is capable of handling high temperatures, voltage fluctuations, and other environmental conditions and as such is ideal for use in medical equipment, communication systems, and automatic controllers.
The specific data is subject to PDF, and the above content is for reference
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