Allicdata Part #: | ZXT951KQTC-ND |
Manufacturer Part#: |
ZXT951KQTC |
Price: | $ 0.58 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | PWR LOW SAT TRANSISTOR TO252 |
More Detail: | Bipolar (BJT) Transistor PNP 60V 6A 120MHz 2.1W Su... |
DataSheet: | ZXT951KQTC Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.52625 |
Specifications
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 6A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 600mA, 6A |
Current - Collector Cutoff (Max): | 20nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 2A, 1V |
Power - Max: | 2.1W |
Frequency - Transition: | 120MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Description
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The ZXT951KQTC is a single bias N-channel enhancement mode vertical DMOSFET transistor with fast switching and low gate drive power consumption. It is manufactured in advanced, low voltage, low power and high-speed CMOS process. This device is suitable for various applications and has a wide range of properties that make it a reliable, versatile and cost effective device for a variety of designs.The ZXT951KQTC is designed to provide excellent performance in terms of both transconductance and current gain. It features low gate drive power consumption, low VGS and improved dynamic response time which make it ideal for use in switch mode power supplies, high-speed applications, load switch and other high-speed switching applications. The device has a dielectric breakdown rating of 800 V and a drain-source breakdown voltage of 50 V. It has a minimum drain-source on-state resistance of 0.002 Ω and a maximum drain-source off-state resistance of 2 MΩ. Its maximum continuous drain current is 3.2 A and its peak pulse drain current is 10 A.The operation of the ZXT951KQTC is based on a standard P-channel DMOSFET transistor. As an enhancement NMOS device, it is designed to be conductive in the “on” state, allowing current to flow from source to drain. The gate voltage determines the switching state; a low-voltage gate drive requires a higher gate voltage to keep the transistor in the “on” state. The gate-source capacitance and the drain-source capacitance are very low, allowing for a fast switching response.The ZXT951KQTC transistor is primarily used in low side and high side switch designs. Due to its low gate drive power consumption and its fast switching time, it can be used in circuits that involve multiple outputs, as it can provide good voltage and current regulation. The device is also suitable for circuits that involve high switching frequencies, such as in dc/dc converter designs.The ZXT951KQTC is an ideal choice for a wide range of applications including switch mode power supplies, load switches, clock speed control circuits, gate driving circuits and pulse width modulators. It is also a good choice for high speed logic circuit applications as it has a fast switching speed and a low gate drive power consumption.Overall, the ZXT951KQTC is a versatile, cost effective, and reliable choice for a variety of applications. Its excellent performance in terms of transconductance and current gain, low gate drive power consumption, and fast switching speed make it an ideal choice for many designs involving low side and high side switch designs, dc/dc converter designs, and various other high speed logic circuit designs.
The specific data is subject to PDF, and the above content is for reference
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